MSCSM70VM19C3AG by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	MSCSM70VM19C3AG
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR; Surface Mount: NO; Maximum Power Dissipation (Abs): 365 W; Terminal Form: UNSPECIFIED; Transistor Element Material: SILICON CARBIDE;
Datasheet	MSCSM70VM19C3AG Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND SCR
Transistor Element Material:	SILICON CARBIDE
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	124 A
Maximum Pulsed Drain Current (IDM):	250 A
Surface Mount:	NO
No. of Terminals:	25
Maximum Power Dissipation (Abs):	365 W
Terminal Position:	UPPER
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-XUFM-X25
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	UNSPECIFIED
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.019 ohm
Maximum Feedback Capacitance (Crss):	29 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-40 Cel
Minimum DS Breakdown Voltage:	700 V
Maximum Drain Current (Abs) (ID):	124 A

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