TP2104N3-G by Microchip Technology | Transistors

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Manufacturer	Microchip Technology
Manufacturer's Part Number	TP2104N3-G
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .74 W; Minimum DS Breakdown Voltage: 40 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	TP2104N3-G Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	.175 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.74 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-T3
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.74 W
Maximum Drain-Source On Resistance:	6 ohm
Maximum Feedback Capacitance (Crss):	10 pF
JEDEC-95 Code:	TO-92
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	40 V
Qualification:	Not Qualified
Additional Features:	LOW THRESHOLD

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