Micron Technology - MT41K2G4THE-125:E

  1. Home
  2. Micron Technology - MT41K2G4THE-125:E
MT41K2G4THE-125:E by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT41K2G4THE-125:E
Description DDR3L DRAM;
Datasheet MT41K2G4THE-125:E Datasheet
In Stock2,491
NAME DESCRIPTION
Memory IC Type: DDR3L DRAM
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,491 - -

Popular Products

Category Top Products

MT42C8128DJ-7 by Micron Technology

MT42C8128DJ-7

Micron Technology

Micron Technology's MT42C8128DJ-7 is a 128KX8 DRAM with 70ns access time, operating at 5V. It features 131072 words, 1048576 bit memory density, and supports fast page access mode. Ideal for video applications requiring high-speed data processing in commercial temperature environments.
W9725G6KB25I by Winbond Electronics

W9725G6KB25I

Winbond Electronics

Winbond Electronics' W9725G6KB25I is a DDR2 DRAM with 16Mx16 organization, operating at 400MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and supports synchronous operation. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.
MTA8ATF1G64HZ-3G2J1 by Micron Technology

MTA8ATF1G64HZ-3G2J1

Micron Technology

Micron Technology's MTA8ATF1G64HZ-3G2J1 DDR DRAM MODULE features 1GX64 organization, 64-bit memory width, and 1073741824 words capacity. Operating in synchronous mode with self-refresh capability at a voltage range of 1.14V to 1.26V, it is ideal for applications requiring high-speed data processing and storage in microelectronic assemblies.
MT41K256M16TW-107:P by Micron Technology

MT41K256M16TW-107:P

Micron Technology

Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT48LC8M16A2P-75IT:G by Micron Technology

MT48LC8M16A2P-75IT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 133MHz clock frequency. It features self-refresh mode, common I/O type, and industrial temperature grade. Ideal for applications requiring fast memory access and high data density in compact designs.
K4S641632D-TC80 by Samsung

K4S641632D-TC80

Samsung

Samsung's K4S641632D-TC80 is a 4MX16 DRAM with 125 MHz clock frequency, 70°C operating temp, and 3.3V supply. Ideal for commercial applications requiring fast memory access and low power consumption. Features include synchronous operation, self-refresh capability, and small outline package design.
MT40A1G8WE-075E:BTR by Micron Technology

MT40A1G8WE-075E:BTR

Micron Technology

Micron Technology's MT40A1G8WE-075E:BTR is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package and common I/O type, suitable for applications requiring high memory density and fast data processing in devices like servers and PCs.
MT48LC8M16A2TG-7E:GTR by Micron Technology

MT48LC8M16A2TG-7E:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.
MT48LC4M32B2TG-7:G by Micron Technology

MT48LC4M32B2TG-7:G

Micron Technology

Micron Technology's MT48LC4M32B2TG-7:G is a 4MX32 SDRAM with 3.3V supply, 143MHz clock frequency, and 86 terminals. It operates synchronously with self-refresh capability and offers common I/O type. Ideal for commercial applications requiring fast access time and high memory density.
M12L2561616A-6TG2A by Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A

Elite Semiconductor Microelectronics Technologyinc

M12L2561616A-6TG2A by Elite Semiconductor is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a nominal voltage of 3.3V and has a max access time of 5.4 ns. This memory IC is commonly used in applications that require high-speed data storage and retrieval, such as computer systems and networking devices.
MT48LC16M16A2P-6A:GTR by Micron Technology

MT48LC16M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
MT41K128M16JT-107:KTR by Micron Technology

MT41K128M16JT-107:KTR

Micron Technology

Micron Technology's MT41K128M16JT-107:KTR is a DDR3L DRAM with 128MX16 organization, operating at 934.5 MHz clock frequency. It features a thin profile grid array package and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption.
K4D64163HF-TC40 by Samsung

K4D64163HF-TC40

Samsung

Samsung's K4D64163HF-TC40 is a 4MX16 DDR1 DRAM with 66 terminals, operating at 250 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT41K64M16TW-107:J by Micron Technology

MT41K64M16TW-107:J

Micron Technology

MT41K64M16TW-107:J by Micron Technology is a DDR3L DRAM with 64MX16 organization, operating at 933 MHz. It features a thin profile grid array package and consumes up to 219 mA. Ideal for applications requiring high-speed synchronous memory with low power consumption.
AS4C32M16SB-7TCN by Alliance Memory

AS4C32M16SB-7TCN

Alliance Memory

Alliance Memory's AS4C32M16SB-7TCN is a 32MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85°C. Featuring self-refresh and four bank page burst access mode, it offers 33554432 words memory density for various commercial applications.
MT48LC8M16A2P-6AIT:G by Micron Technology

MT48LC8M16A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC8M16A2P-6AIT:G is a 3.3V Synchronous DRAM with 8MX16 organization, operating at 167 MHz clock frequency. It features self-refresh mode, common I/O type, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory access in compact form factors.
MT41J256M8DA-125:K by Micron Technology

MT41J256M8DA-125:K

Micron Technology

Micron Technology's MT41J256M8DA-125:K is a DDR3 DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
S27KL0642GABHB023 by Infineon Technologies

S27KL0642GABHB023

Infineon Technologies

Infineon's S27KL0642GABHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for automotive applications due to AEC-Q100 screening level and common I/O type.
MT48LC4M32B2P-6AIT:L by Micron Technology

MT48LC4M32B2P-6AIT:L

Micron Technology

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.
MT41K128M16JT-125AAT:K by Micron Technology

MT41K128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.