Micron Technology - MT46H64M32LFBQ-48WT:CT

  1. Home
  2. Micron Technology - MT46H64M32LFBQ-48WT:CT
MT46H64M32LFBQ-48WT:CT by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT46H64M32LFBQ-48WT:CT
Description LPDDR1 DRAM;
Datasheet MT46H64M32LFBQ-48WT:CT Datasheet
In Stock1,669
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,669 - -

Popular Products

Category Top Products

MT47H64M16HR-25EIT by Micron Technology

MT47H64M16HR-25EIT

Micron Technology

Micron Technology's MT47H64M16HR-25EIT is a DDR2 DRAM with 64MX16 organization, operating at 1.55V. It features synchronous operation, self-refresh capability, and a memory density of 1073741824 bits. Ideal for industrial applications requiring fast access times and multi-bank page burst access mode.
AS4C4M16SA-7TCNTR by Alliance Memory

AS4C4M16SA-7TCNTR

Alliance Memory

AS4C4M16SA-7TCNTR by Alliance Memory is a 3.3V Synchronous DRAM with 4MX16 organization and 16-bit memory width. Operating at temperatures from 0 to 70°C, it features self-refresh mode and offers a memory density of 67108864 bits. Ideal for applications requiring fast access times and high memory capacity in compact spaces.
MT41J256M16HA-125:E by Micron Technology

MT41J256M16HA-125:E

Micron Technology

Micron Technology's MT41J256M16HA-125:E is a DDR3 DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and synchronous operation mode. Ideal for applications requiring high-speed memory access in devices like servers and networking equipment.
MT48LC32M16A2P-75 by Micron Technology

MT48LC32M16A2P-75

Micron Technology

MT48LC32M16A2P-75 by Micron Technology is a 32MX16 DRAM with 3.3V supply, 133MHz clock frequency, and 70°C operating temp. Ideal for commercial applications requiring synchronous memory with common I/O and self-refresh capabilities.
MT48LC4M16A2P-6A:J by Micron Technology

MT48LC4M16A2P-6A:J

Micron Technology

Micron Technology's MT48LC4M16A2P-6A:J is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 167MHz. It features a small outline package and offers common I/O type for applications requiring fast access times and high memory density.
MT40A1G16KNR-062E:E by Micron Technology

MT40A1G16KNR-062E:E

Micron Technology

Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
MT41J256M8DA-125:K by Micron Technology

MT41J256M8DA-125:K

Micron Technology

Micron Technology's MT41J256M8DA-125:K is a DDR3 DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
K4S641632K-UC75 by Samsung

K4S641632K-UC75

Samsung

Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.
IS42S32400F-7BLI by Integrated Silicon Solution

IS42S32400F-7BLI

Integrated Silicon Solution

IS42S32400F-7BLI by Integrated Silicon Solution is a 4MX32 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low standby current consumption.
MT42L32M32D1HE-18AAT:D by Micron Technology

MT42L32M32D1HE-18AAT:D

Micron Technology

Micron Technology's MT42L32M32D1HE-18AAT:D is a LPDDR2 DRAM with 32MX32 organization, operating at 533 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in automotive electronics or industrial devices.
KM48V514BJ-6 by Samsung

KM48V514BJ-6

Samsung

Samsung's KM48V514BJ-6 is a 512Kx8 EDO DRAM with 3.3V supply, operating in asynchronous mode. It features 60ns access time, 1024 refresh cycles, and 70mA max supply current. Ideal for applications requiring fast page access and common I/O type in commercial temperature grade environments.
MT41K128M16JT-125AAT:K by Micron Technology

MT41K128M16JT-125AAT:K

Micron Technology

Micron Technology's MT41K128M16JT-125AAT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package, operates at 1.35V, and has an industrial temperature grade. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
NT6DM32M16BD-T1I by Nanya Technology

NT6DM32M16BD-T1I

Nanya Technology

NT6DM32M16BD-T1I by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 536870912 bit memory density, and operates at 1.8V. Suitable for industrial applications, it features synchronous operation, self-refresh capability, and a very thin profile grid array package style.
EDB4432BBBJ-1DAIT-F-R by Micron Technology

EDB4432BBBJ-1DAIT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
MT40A1G8SA-062E:E by Micron Technology

MT40A1G8SA-062E:E

Micron Technology

Micron Technology's MT40A1G8SA-062E:E is a DDR4 DRAM with 1GX8 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact form factor.
IS42S32400F-7BLI-TR by Integrated Silicon Solution

IS42S32400F-7BLI-TR

Integrated Silicon Solution

IS42S32400F-7BLI-TR by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. Featuring a max clock frequency of 143 MHz, it suits industrial applications requiring high memory density and fast access times.
TC514400AZ-60 by Toshiba

TC514400AZ-60

Toshiba

Toshiba's TC514400AZ-60 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 60ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a rectangular package style.
MT41K128M16JT-125IT:K by Micron Technology

MT41K128M16JT-125IT:K

Micron Technology

MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT40A256M16GE-083EAIT:BTR by Micron Technology

MT40A256M16GE-083EAIT:BTR

Micron Technology

Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT53E512M32D1ZW-046IT:B by Micron Technology

MT53E512M32D1ZW-046IT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046IT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.