Micron Technology - MT53E768M64D4DT-046WT:A

  1. Home
  2. Micron Technology - MT53E768M64D4DT-046WT:A
MT53E768M64D4DT-046WT:A by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MT53E768M64D4DT-046WT:A
Description LPDDR4 DRAM;
Datasheet MT53E768M64D4DT-046WT:A Datasheet
In Stock1,064
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,064 - -

Popular Products

Category Top Products

MT53E256M16D1FW-046WT:B by Micron Technology

MT53E256M16D1FW-046WT:B

Micron Technology

LPDDR4 DRAM;
S27KS0642GABHI023 by Infineon Technologies

S27KS0642GABHI023

Infineon Technologies

Infineon's S27KS0642GABHI023 DRAM features 8MX8 organization, 200 MHz clock frequency, and 67108864 bit memory density. Ideal for applications requiring high-speed synchronous operation in a compact form factor with low power consumption.
W9825G6KH-5 by Winbond Electronics

W9825G6KH-5

Winbond Electronics

W9825G6KH-5 by Winbond Electronics is a 16Mx16 Synchronous DRAM with 268MB memory density. Operating at 3.3V, it offers a max access time of 4.5ns and supports four bank page burst access mode. Ideal for commercial applications requiring high-speed synchronous memory solutions in compact form factors.
MT48LC16M16A2B4-7EIT:G by Micron Technology

MT48LC16M16A2B4-7EIT:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7EIT:G is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz clock frequency. It features a very thin profile grid array package and supports common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.
K4J10324QD-HJ1A by Samsung

K4J10324QD-HJ1A

Samsung

Samsung's K4J10324QD-HJ1A DDR3 DRAM features 32MX32 organization, 1000 MHz clock frequency, and 32M word code. Ideal for high-performance applications requiring fast data processing and storage with a max supply current of 1000 mA.
MT53E1G16D1FW-046AIT:A by Micron Technology

MT53E1G16D1FW-046AIT:A

Micron Technology

LPDDR4 DRAM;
IS42S16320F-7TL-TR by Integrated Silicon Solution

IS42S16320F-7TL-TR

Integrated Silicon Solution

IS42S16320F-7TL-TR by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 536870912-bit memory density. It operates at 3.3V, has a 70°C max temp, and offers self-refresh capability. Ideal for applications requiring fast access times and high memory density in commercial-grade environments.
M393B2G70BH0-YH9 by Samsung

M393B2G70BH0-YH9

Samsung

Samsung's M393B2G70BH0-YH9 DRAM features 240 terminals, 1.35V supply voltage, and a max clock frequency of 667MHz. Ideal for high-performance computing applications requiring fast memory access and data processing capabilities.
MT41J128M16JT-125G:K by Micron Technology

MT41J128M16JT-125G:K

Micron Technology

Micron Technology's MT41J128M16JT-125G:K is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in compact devices.
K4S561632C-TC75 by Samsung

K4S561632C-TC75

Samsung

Samsung's K4S561632C-TC75 is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for commercial applications, it offers 16777216 words memory density and supports four bank page burst access mode.
MT41J256M8DA-125:K by Alliance Memory

MT41J256M8DA-125:K

Alliance Memory

DDR3 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 95 Cel;
MT53E1G32D2FW-046WT:B by Micron Technology

MT53E1G32D2FW-046WT:B

Micron Technology

Micron Technology's MT53E1G32D2FW-046WT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices like smartphones and tablets.
M368L2923DUN-CCC by Samsung

M368L2923DUN-CCC

Samsung

Samsung M368L2923DUN-CCC is a 128MX64 DDR DRAM MODULE with 184 terminals. It operates synchronously at up to 200 MHz, offering a memory density of 8589934592 bits. Ideal for applications requiring high-speed data processing and storage in commercial-grade environments.
MTA4ATF1G64HZ-3G2E1 by Micron Technology

MTA4ATF1G64HZ-3G2E1

Micron Technology

Micron Technology's MTA4ATF1G64HZ-3G2E1 is a DDR4 DRAM MODULE with 1GX64 organization, operating at up to 1600 MHz. It features self-refresh capability and synchronous operation, making it ideal for high-performance computing applications.
TC514400AP-70 by Toshiba

TC514400AP-70

Toshiba

Toshiba's TC514400AP-70 is a 1MX4 DRAM with 1048576 words, operating at 5V. It features a max access time of 70ns and refresh cycles of 1024, suitable for commercial applications requiring fast page access in a CMOS technology package.
MT41J128M16JT-093:K by Alliance Memory

MT41J128M16JT-093:K

Alliance Memory

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
MT48LC8M16A2P-6AXIT:L by Micron Technology

MT48LC8M16A2P-6AXIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AXIT:L is a 8MX16 Synchronous DRAM with 3.3V supply voltage, operating at 167MHz clock frequency. Ideal for applications requiring fast access time and high memory density, such as automotive electronics or industrial control systems.
S70KS1282GABHI020 by Cypress Semiconductor

S70KS1282GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
MT41J128M16JT-093G by Micron Technology

MT41J128M16JT-093G

Micron Technology

Micron Technology's MT41J128M16JT-093G is a DDR3 DRAM with 128MX16 organization, operating at 1066 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
KMM591000B-8 by Samsung

KMM591000B-8

Samsung

Samsung's KMM591000B-8 is a 1MX9 DRAM module with 1048576 words, 9437184 bit memory density, and 80 ns max access time. It operates in fast page access mode at a nominal voltage of 5V. Ideal for applications requiring high-speed data storage and retrieval in commercial temperature environments.