Micron Technology - MTA144ASQ16G72LSZ-2S9XX

  1. Home
  2. Micron Technology - MTA144ASQ16G72LSZ-2S9XX
MTA144ASQ16G72LSZ-2S9XX by Micron Technology

Image shown is a representation only.

Manufacturer Micron Technology
Manufacturer's Part Number MTA144ASQ16G72LSZ-2S9XX
Description DDR4 DRAM MODULE; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet MTA144ASQ16G72LSZ-2S9XX Datasheet
In Stock1,573
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Peak Reflow Temperature (C): NOT SPECIFIED
Memory IC Type: DDR4 DRAM MODULE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,573 - -

Popular Products

Category Top Products

MT41K128M16HA-15E:D by Micron Technology

MT41K128M16HA-15E:D

Micron Technology

Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
AS4C256M16D3B-12BIN by Alliance Memory

AS4C256M16D3B-12BIN

Alliance Memory

Alliance Memory's AS4C256M16D3B-12BIN is a 256MX16 DDR3 DRAM with synchronous operation and self-refresh capability. Featuring a package style of GRID ARRAY, it has a memory density of 4294967296 bit and operates at temperatures ranging from 0 to 85 °C. Ideal for applications requiring high-speed data storage and retrieval in compact electronic devices.
MT41K512M16TNA-125IT:E by Micron Technology

MT41K512M16TNA-125IT:E

Micron Technology

Micron Technology's MT41K512M16TNA-125IT:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.
S27KS0642GABHI020 by Cypress Semiconductor

S27KS0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Equivalence Code: BGA24,5X5,40;
MT53E512M32D1ZW-046AIT:B by Micron Technology

MT53E512M32D1ZW-046AIT:B

Micron Technology

Micron Technology's MT53E512M32D1ZW-046AIT:B is a LPDDR4 DRAM with 512MX32 organization, operating at 2133 MHz. It features self-refresh mode, common I/O type, and AEC-Q100 screening level. Ideal for applications requiring high-speed synchronous memory with low power consumption in automotive electronics and industrial devices.
K4D263238F-QC50 by Samsung

K4D263238F-QC50

Samsung

Samsung's K4D263238F-QC50 is a DDR1 DRAM with 4MX32 organization and 32 memory width. Operating at 200 MHz, it offers a max clock frequency and supports synchronous mode for common I/O type applications. With self-refresh capability and thin profile packaging, it is ideal for commercial-grade systems requiring fast access times.
AS4C16M16SA-7TCN by Alliance Memory

AS4C16M16SA-7TCN

Alliance Memory

AS4C16M16SA-7TCN by Alliance Memory is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. Ideal for commercial applications, it offers self-refresh capability and supports common I/O type with a package size of 22.22mm x 10.16mm in a small outline, thin profile style.
K4D26323RA-GC2A by Samsung

K4D26323RA-GC2A

Samsung

Samsung's K4D26323RA-GC2A is a DDR1 DRAM with 4MX32 organization, operating at 350 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
IS43LR16800G-6BLI-TR by Integrated Silicon Solution

IS43LR16800G-6BLI-TR

Integrated Silicon Solution

IS43LR16800G-6BLI-TR by Integrated Silicon Solution is an 8MX16 DDR1 DRAM with a memory density of 134217728 bits. It operates synchronously at a max temperature of 85°C and has a self-refresh mode. This thin-profile, fine-pitch package is ideal for industrial applications requiring fast access times and low power consumption.
AS4C64M16D2A-25BIN by Alliance Memory

AS4C64M16D2A-25BIN

Alliance Memory

Alliance Memory's AS4C64M16D2A-25BIN is a 64MX16 DDR2 DRAM with 1.8V supply voltage, operating in synchronous mode with self-refresh capability. Suitable for applications requiring high memory density and fast access speeds, such as networking equipment and industrial automation systems.
MT41K256M16HA-125XIT:E by Micron Technology

MT41K256M16HA-125XIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125XIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in grid array package style.
W3H64M72E-533SBI by Microsemi

W3H64M72E-533SBI

Microsemi

The Microsemi W3H64M72E-533SBI DDR2 DRAM features 64MX72 organization, 267 MHz clock frequency, and 1.8V nominal voltage. Ideal for industrial applications requiring high memory density and fast access times in a synchronous operating mode.
S27KL0642DPBHB023 by Infineon Technologies

S27KL0642DPBHB023

Infineon Technologies

Infineon's S27KL0642DPBHB023 DRAM features 8MX8 organization, operates synchronously at up to 200 MHz, and has a memory density of 67108864 bits. Ideal for applications requiring high-speed data processing and storage in automotive electronics, IoT devices, and industrial control systems.
AS4C32M16SB-6TINTR by Alliance Memory

AS4C32M16SB-6TINTR

Alliance Memory

SYNCHRONOUS DRAM; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
IS42S81600F-7TLI-TR by Integrated Silicon Solution

IS42S81600F-7TLI-TR

Integrated Silicon Solution

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.
MT41J256M8DA-125:K by Micron Technology

MT41J256M8DA-125:K

Micron Technology

Micron Technology's MT41J256M8DA-125:K is a DDR3 DRAM with 256MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like computers and servers.
MT40A256M16LY-062EAAT:F by Micron Technology

MT40A256M16LY-062EAAT:F

Micron Technology

Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
W972GG6KB25I by Winbond Electronics

W972GG6KB25I

Winbond Electronics

Winbond Electronics' W972GG6KB25I is a 128MX16 DDR2 DRAM with 1.8V supply, operating at 400MHz clock frequency. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high-speed memory performance in compact form factors like mobile devices and embedded systems.
KVR16LN11/8 by Kingston Technology Company

KVR16LN11/8

Kingston Technology Company

Kingston KVR16LN11/8 DDR DRAM Module features 1Gx64 organization, operates synchronously at 1.35V, and has a memory width of 64 bits. Ideal for applications requiring high-speed data processing in microelectronic assemblies with a max operating temperature of 85°C.
MT40A512M16JY-075E:BTR by Micron Technology

MT40A512M16JY-075E:BTR

Micron Technology

Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.