RD15HVF1 by Mitsubishi Electric | Transistors

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Manufacturer	Mitsubishi Electric
Manufacturer's Part Number	RD15HVF1
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 48 W; Package Style (Meter): FLANGE MOUNT; Qualification: Not Qualified;
Datasheet	RD15HVF1 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	4 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	SILVER
No. of Terminals:	3
Maximum Power Dissipation (Abs):	48 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	30 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	4 A

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