PMPB10XNEZ by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMPB10XNEZ
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; JESD-30 Code: S-PDSO-N6; Operating Mode: ENHANCEMENT MODE;
Datasheet	PMPB10XNEZ Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	9 A
Maximum Pulsed Drain Current (IDM):	36 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	6
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	S-PDSO-N6
No. of Elements:	1
Package Shape:	SQUARE
Terminal Form:	NO LEAD
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.014 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	934066863184 5202-PMPB10XNEZTR 2156-PMPB10XNEZ-NEX 1727-2702-6 PMPB10XNEZ-ND 568-13221-1 568-13221-1-ND 568-13221-2 568-13221-2-ND 568-13221-6-ND NEXNEXPMPB10XNEZ 568-13221-6 1727-2702-1 1727-2702-2
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	20 V
Reference Standard:	IEC-60134
Peak Reflow Temperature (C):	260

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