Nexperia - PMV30XPAR

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PMV30XPAR by Nexperia

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Manufacturer Nexperia
Manufacturer's Part Number PMV30XPAR
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet PMV30XPAR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.9 A
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 8.3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain-Source On Resistance: .038 ohm
Other Names: 934661108215
1727-PMV30XPARDKR
5202-PMV30XPARTR
1727-PMV30XPARCT
1727-PMV30XPARTR
Maximum Feedback Capacitance (Crss): 110 pF
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Reference Standard: AEC-Q101; IEC-60134
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