PMV30XPAR by Nexperia | Transistors

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Manufacturer	Nexperia
Manufacturer's Part Number	PMV30XPAR
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet	PMV30XPAR Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	110 pF
Maximum Drain Current (ID):	4.9 A
JEDEC-95 Code:	TO-236AB
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
Minimum Operating Temperature:	-55 Cel
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Maximum Power Dissipation (Abs):	8.3 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Reference Standard:	AEC-Q101; IEC-60134
Maximum Drain-Source On Resistance:	.038 ohm

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