NXP Semiconductors - 2N7000AMO

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2N7000AMO by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 2N7000AMO
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Maximum Drain Current (ID): .3 A; Maximum Drain-Source On Resistance: 5 ohm;
Datasheet 2N7000AMO Datasheet
In Stock78
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 10 pF
Maximum Drain Current (ID): .3 A
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain-Source On Resistance: 5 ohm
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