NXP Semiconductors - 934055918112

  1. Home
  2. NXP Semiconductors - 934055918112
934055918112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 934055918112
Description WIDE BAND HIGH POWER; Maximum Operating Temperature: 100 Cel; Minimum Operating Temperature: -20 Cel; Characteristic Impedance: 75 ohm; Gain: 19 dB; Construction: MODULE;
Datasheet 934055918112 Datasheet
In Stock2,120
NAME DESCRIPTION
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 860 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Minimum Operating Temperature: -20 Cel
Gain: 19 dB
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,120 - -

Popular Products

Category Top Products

PMA3-83LNW+ by Mini-circuits

PMA3-83LNW+

Mini-circuits

PMA3-83LNW+ by Mini-circuits is a wide band low power RF amplifier with a gain of 16.9 dB. It operates at frequencies ranging from 400 MHz to 8000 MHz and has a max input power of 16 dBm. This amplifier is commonly used in applications requiring amplification in the RF and microwave range.
MGA-86576-STR by Hewlett Packard

MGA-86576-STR

Hewlett Packard

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
NJG1150UA2-TE1 by Nisshinbo Micro Devices

NJG1150UA2-TE1

Nisshinbo Micro Devices

NARROW BAND LOW POWER;
MSA-1105-STR by Hewlett Packard

MSA-1105-STR

Hewlett Packard

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB; Maximum Operating Frequency: 1300 MHz;
AM-147-PIN by Tyco Electronics M/a-com

AM-147-PIN

Tyco Electronics M/a-com

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 500 MHz; Gain: 15.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: HIGH RELIABILITY, I/P POWER-MAX (PEAK)=27DBM;
PGA-102+ by Mini-circuits

PGA-102+

Mini-circuits

The Mini-circuits PGA-102+ is a wide band low power RF amplifier with 14.4 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 28 dBm and operates on a 3.3V supply, making it suitable for various RF and microwave applications requiring amplification in the frequency range of 50-6000 MHz.
CMD192C5 by Qorvo

CMD192C5

Qorvo

Qorvo's CMD192C5 is a wide band low power RF amplifier with 17 dB gain and 23 dBm CW input power. Operating from -40 to 85°C, it covers 0-20000 MHz range. Ideal for RF & microwave applications requiring high performance in compact designs.
MAAM-011290-DIE by M/a-com Technology Solutions

MAAM-011290-DIE

M/a-com Technology Solutions

MAAM-011290-DIE by M/a-com Technology Solutions is a wide band medium power RF amplifier with 16.5 dB gain, operating from 5-20 GHz. It has a max input power of 10 dBm and VSWR of 1.58, suitable for surface mount applications in RF & microwave systems.
MGA-565P8-BLK by Broadcom

MGA-565P8-BLK

Broadcom

Broadcom's MGA-565P8-BLK is a wide band low power RF amplifier with 20 dB gain, handling up to 15 dBm CW input power. It operates from 0-3500 MHz, featuring a VSWR of 2. Ideal for RF & microwave applications due to its high performance and matte tin finish.
A64 by M/a-com Technology Solutions

A64

M/a-com Technology Solutions

WIDE BAND LOW POWER; No. of Terminals: 4; Package Body Material: METAL; Package Equivalence Code: CAN4,.3; Power Supplies (V): 15; Minimum Operating Frequency: 10 MHz;
GALI-21+ by Mini-circuits

GALI-21+

Mini-circuits

GALI-21+ by Mini-circuits is a wideband low power RF amplifier with 11.5 dB gain, suitable for frequencies from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 2.5, making it ideal for RF and microwave applications requiring compact surface-mount components.
760 by Anaren

760

Anaren

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
HMC451LC3TR by Analog Devices

HMC451LC3TR

Analog Devices

Analog Devices' HMC451LC3TR is a wide band low power RF amplifier with 14 dB gain, operating from 5-20 GHz. It features a max input power of 10 dBm and operates in temperatures ranging from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact ceramic package.
BGA824N6E6327XTSA1 by Infineon Technologies

BGA824N6E6327XTSA1

Infineon Technologies

BGA824N6E6327XTSA1 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 17 dB. It operates in the frequency range of 1550 MHz to 1615 MHz and can handle a max input power of 0 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.
BGA614H6327XTSA1 by Infineon Technologies

BGA614H6327XTSA1

Infineon Technologies

Infineon's BGA614H6327XTSA1 is a wide band low power RF amplifier with 17.5 dB gain and 10 dBm max input power. Operating from -65 to 150 °C, it covers frequencies from 0 to 2400 MHz, making it ideal for RF & microwave applications requiring high performance in a compact form factor.
QPA9421TR13 by Qorvo

QPA9421TR13

Qorvo

NARROW BAND HIGH POWER;
SGA3363Z by Qorvo

SGA3363Z

Qorvo

SGA3363Z by Qorvo is a RF amplifier with 15.5 dB gain, operating from 0 to 5500 MHz. It has a max input power of 18 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wide band low power applications, this component features a plastic/epoxy package and requires a 2.6V power supply.
HMC478ST89E by Analog Devices

HMC478ST89E

Analog Devices

Analog Devices' HMC478ST89E is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to 85°C.
HMC409LP4ETR by Hittite Microwave

HMC409LP4ETR

Hittite Microwave

NARROW BAND MEDIUM POWER; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 3300 MHz; Gain: 28 dB; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 10 dBm;