NXP Semiconductors - 934063235118

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934063235118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934063235118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-PSSO-G6; Operating Mode: ENHANCEMENT MODE;
Datasheet 934063235118 Datasheet
In Stock1,170
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 214 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 346 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 65 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .011 ohm
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