NXP Semiconductors - 935314227128

  1. Home
  2. NXP Semiconductors - 935314227128
935314227128 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number 935314227128
Description RF Power Field-Effect Transistors;
Datasheet 935314227128 Datasheet
In Stock3,375
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,375 - -

Popular Products

Category Top Products

934061844112 by NXP Semiconductors

934061844112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
RF3L05200CB4 by STMicroelectronics

RF3L05200CB4

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD84008-E by STMicroelectronics

PD84008-E

STMicroelectronics

PD84008-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount device ensures efficient performance with a max power dissipation of 79 W.
A2T21S161W12SR3 by NXP Semiconductors

A2T21S161W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
CGH40010F by Wolfspeed

CGH40010F

Wolfspeed

CGH40010F by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and uses Gallium Nitride technology for high electron mobility. Ideal for amplifier applications, this transistor has a max operating temperature of 105°C and features a ceramic, metal-sealed co-fired package body.
VRF151G by Microchip Technology

VRF151G

Microchip Technology

VRF151G by Microchip Technology is a N-CHANNEL RF Power FET with 170V DS Breakdown Voltage, 40A Max Drain Current, and 500W Max Power Dissipation. Commonly used in amplifier applications for Very High Frequency Band operations due to its ceramic-metal sealed co-fired package and dual terminal position.
934064687118 by NXP Semiconductors

934064687118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: FLAT;
LET9070CB by STMicroelectronics

LET9070CB

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
PD55003 by STMicroelectronics

PD55003

STMicroelectronics

STMicroelectronics PD55003 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 2.5A Drain Current and 31.7W Power Dissipation in a SMALL OUTLINE package.
PTFA080551EV4R250XTMA1 by Infineon Technologies

PTFA080551EV4R250XTMA1

Infineon Technologies

PTFA080551EV4R250XTMA1 by Infineon is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage and 18dB Power Gain. It operates in the Ultra High Frequency Band, ideal for amplifier applications. The transistor features a ceramic-metal package, flat terminals, and can withstand temperatures up to 200°C.
PD54003TR-E by STMicroelectronics

PD54003TR-E

STMicroelectronics

PD54003TR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance up to 165 °C.
934064591112 by NXP Semiconductors

934064591112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Drain Current (ID): 28 A;
LET9180 by STMicroelectronics

LET9180

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
SGK7785-30A by Sumitomo Electric Industries

SGK7785-30A

Sumitomo Electric Industries

RF Power Field-Effect Transistors;
VRF151G by Microsemi

VRF151G

Microsemi

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Terminal Finish: TIN SILVER COPPER; No. of Terminals: 4;
AFT27S010NT1 by Freescale Semiconductor

AFT27S010NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A2T26H160-24SR3 by Freescale Semiconductor

A2T26H160-24SR3

Freescale Semiconductor

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): NOT APPLICABLE;
PD84008L-E by STMicroelectronics

PD84008L-E

STMicroelectronics

PD84008L-E by STMicroelectronics is an N-channel RF power FET designed for amplification in ultra-high frequency applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates at up to 150 °C. This surface-mount transistor ensures efficient performance in compact designs.