NXP Semiconductors - 935316174178

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935316174178 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935316174178
Description RF Power Field-Effect Transistors;
Datasheet 935316174178 Datasheet
In Stock2,421
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MRFE6S9045NR1 by NXP Semiconductors

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LET20045C by STMicroelectronics

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LET20045C by STMicroelectronics is an N-CHANNEL RF Power FET with 80V DS Breakdown Voltage. It operates in Enhancement Mode for AMPLIFIER applications in L BAND frequency range. With 12A Drain Current and 130W Power Dissipation, it's a high-performance transistor suitable for various RF power amplification needs.
934061788112 by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F4;
MRF141G by New Jersey Semiconductor Products

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N-CHANNEL; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON; Maximum Drain Current (ID): 32 A;
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934065239112 by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 4;
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934065232112 by NXP Semiconductors

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