NXP Semiconductors - 935323695178

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935323695178 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935323695178
Description RF Power Field-Effect Transistors;
Datasheet 935323695178 Datasheet
In Stock886
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BLF878,112 by NXP Semiconductors

BLF878,112

NXP Semiconductors

NXP Semiconductors BLF878,112 is an N-CHANNEL RF Power FET with 2 elements for AMPLIFIER applications. It operates in the ULTRA HIGH FREQUENCY BAND, with a max power dissipation of 300W and a min DS breakdown voltage of 89V. The package style is FLANGE MOUNT, suitable for surface mount assembly at a max temp of 200°C.
CGHV40030F by Wolfspeed

CGHV40030F

Wolfspeed

CGHV40030F by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage and 15dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring GALLIUM NITRIDE technology, it operates from -40 to 85 °C with a max ID of 4.2A and 0.15pF Crss for high-performance needs.
PD85050STR by STMicroelectronics

PD85050STR

STMicroelectronics

RF Power Field-Effect Transistors;
MRF6VP11KHR5 by NXP Semiconductors

MRF6VP11KHR5

NXP Semiconductors

N-CHANNEL; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;
SD2931-12W by STMicroelectronics

SD2931-12W

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
PD55008L by STMicroelectronics

PD55008L

STMicroelectronics

PD55008L by STMicroelectronics is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 5A max Drain Current and 45W Power Dissipation. Package style is CHIP CARRIER, ideal for SOURCE connection in various electronic devices.
TIM5964-35SLA-422 by Toshiba

TIM5964-35SLA-422

Toshiba

Toshiba's TIM5964-35SLA-422 is an N-channel RF Power FET with a ceramic-metal-sealed co-fired package. Operating in depletion mode, it has a max drain current of 20A and can handle up to 115.4W power dissipation. Ideal for amplifier applications in the C band due to its high-frequency capabilities and source case connection.
SD2921 by STMicroelectronics

SD2921

STMicroelectronics

SD2921 by STMicroelectronics is an N-CHANNEL RF Power FET with 125V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 16A and power dissipation of 219W. Ideal for high-power applications requiring efficient signal amplification in radial terminal configurations.
935442486528 by NXP Semiconductors

935442486528

NXP Semiconductors

RF Power Field-Effect Transistors;
PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
MRF151A by Tyco Electronics M/a-com

MRF151A

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 125 V; JESD-30 Code: O-CRFM-F4; Transistor Element Material: SILICON;
934056498112 by NXP Semiconductors

934056498112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 18 A; Qualification: Not Qualified;
934061174112 by NXP Semiconductors

934061174112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLATPACK; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
PD84008STR-E by STMicroelectronics

PD84008STR-E

STMicroelectronics

PD84008STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
MRF134 by Motorola

MRF134

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
A2G35S160-01SR3 by NXP Semiconductors

A2G35S160-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
AFG24S100H by NXP Semiconductors

AFG24S100H

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-CDFM-F2; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;
PD54008S-E-E by STMicroelectronics

PD54008S-E-E

STMicroelectronics

PD54008S-E-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This compact surface mount transistor ensures efficient performance up to 165 °C.
PD85050S by STMicroelectronics

PD85050S

STMicroelectronics

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;