NXP Semiconductors - 935373611598

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935373611598 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935373611598
Description RF Power Field-Effect Transistors;
Datasheet 935373611598 Datasheet
In Stock4,397
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A2G35S160-01SR3 by NXP Semiconductors

A2G35S160-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
A2T18S262W12NR3 by NXP Semiconductors

A2T18S262W12NR3

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;
934061296112 by NXP Semiconductors

934061296112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
PD57070 by STMicroelectronics

PD57070

STMicroelectronics

PD57070 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
STAP57030 by STMicroelectronics

STAP57030

STMicroelectronics

STAP57030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in demanding environments.
A2T23H200W23SR6 by NXP Semiconductors

A2T23H200W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
934061137118 by NXP Semiconductors

934061137118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DS Breakdown Voltage: 65 V;
MRF171A by Tyco Electronics M/a-com

MRF171A

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): NOT SPECIFIED; Package Shape: ROUND;
PD84010STR-E by STMicroelectronics

PD84010STR-E

STMicroelectronics

PD84010STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 8 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact surface-mount transistor ensures efficient performance with a max power dissipation of 95 W.
MRF176GU by Motorola

MRF176GU

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 400 W; Package Style (Meter): FLANGE MOUNT; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
A3T18H455W23SR6 by NXP Semiconductors

A3T18H455W23SR6

NXP Semiconductors

NXP Semiconductors A3T18H455W23SR6 is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage, 15dB Power Gain, and L BAND frequency. Ideal for AMPLIFIER applications, it operates in ENHANCEMENT MODE with a temperature range of -40 to 225 °C.
CGHV96130F by Wolfspeed

CGHV96130F

Wolfspeed

RF Power Field-Effect Transistors;
PD57018TR-E by STMicroelectronics

PD57018TR-E

STMicroelectronics

PD57018TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications, featuring a max drain current of 2.5 A and a breakdown voltage of 65 V. It operates in the ultra-high frequency band with a power dissipation of 31.7 W. This surface-mount transistor ensures reliable performance up to 165 °C.
MW6S010GNR1 by Freescale Semiconductor

MW6S010GNR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 61.4 W; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-PDSO-G2;
SD56060 by STMicroelectronics

SD56060

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
MRF134 by Asi Semiconductor

MRF134

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Minimum DS Breakdown Voltage: 65 V; Package Shape: ROUND; Maximum Drain Current (Abs) (ID): .9 A;
SD2951-10 by STMicroelectronics

SD2951-10

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
CLF1G0035-50 by NXP Semiconductors

CLF1G0035-50

NXP Semiconductors

The NXP Semiconductors CLF1G0035-50 is an RF Power FET with a min DS Breakdown Voltage of 150V, operating in the S Band. It features Gallium Nitride technology, DEPLETION MODE, and is suitable for AMPLIFIER applications. The package style is FLANGE MOUNT with CERAMIC/METAL-SEALED COFIRED body material.
934061301112 by NXP Semiconductors

934061301112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE;
MRF1518NT1 by NXP Semiconductors

MRF1518NT1

NXP Semiconductors

NXP Semiconductors' MRF1518NT1 is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with 40V DS breakdown voltage and 4A drain current. With a max power dissipation of 62.5W, it is designed for ultra-high frequency band usage.