NXP Semiconductors - 935377234129

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935377234129 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935377234129
Description RF Power Field-Effect Transistors;
Datasheet 935377234129 Datasheet
In Stock1,476
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DE375-501N21A by IXYS Corporation

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PD57006 by STMicroelectronics

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BLF177 by Asi Semiconductor

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PD55025STR-E by STMicroelectronics

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STMicroelectronics' PD55025STR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a SINGLE configuration, 7A ID, and operates in ENHANCEMENT MODE at up to 165°C.
CLF1G0035-50,112 by Ampleon Netherlands B V

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;
TSD2900 by STMicroelectronics

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TSD2900 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. Featuring a 1.25A Max Drain Current and METAL-OXIDE SEMICONDUCTOR technology, it can withstand temperatures up to 200 °C.
PD57006TR-E by STMicroelectronics

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PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
STAC4932B by STMicroelectronics

STAC4932B

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STAC4932B by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 200V min DS breakdown voltage, operates in the ultra-high frequency band, and supports surface mount with a max temp of 200 °C. Ideal for high-performance RF circuits.
PD55003L by STMicroelectronics

PD55003L

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STMicroelectronics PD55003L is an N-CHANNEL RF Power FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. With 40V DS Breakdown Voltage, it has a max ID of 2.5A and can dissipate up to 26.6W power at 150°C.
AFT26H250-24SR6 by Freescale Semiconductor

AFT26H250-24SR6

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N-CHANNEL; Configuration: SINGLE; Maximum Time At Peak Reflow Temperature (s): 40; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 1; Maximum Operating Temperature: 225 Cel;
A2T27S020GNR1 by NXP Semiconductors

A2T27S020GNR1

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
FLL57MK by Sumitomo Electric Industries

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: L BAND; No. of Terminals: 2;
AFT20P060-4NR3 by Freescale Semiconductor

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N-CHANNEL; Configuration: SINGLE; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: Matte Tin (Sn);
MRF1513T1 by Freescale Semiconductor

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31.2 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
TSD2904 by STMicroelectronics

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TSD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with a 60V DS Breakdown Voltage. It operates in the Ultra High Frequency Band and has a max Drain Current of 7A, making it ideal for amplifier applications. The transistor features a METAL-OXIDE SEMICONDUCTOR technology and can withstand temperatures up to 200 °C.
A2G26H281-04SR3 by NXP Semiconductors

A2G26H281-04SR3

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N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: R-CDFP-F4; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
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PD55008STR-E by STMicroelectronics is an N-CHANNEL RF Power Field Effect Transistor (FET) with a min DS breakdown voltage of 40V. It is used as an amplifier in the ultra high frequency band, with a max drain current of 4A and a max power dissipation of 52.8W.
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RF Power Field-Effect Transistors; Terminal Finish: MATTE TIN; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3;