NXP Semiconductors - 935424245528

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935424245528 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935424245528
Description RF Power Field-Effect Transistors;
Datasheet 935424245528 Datasheet
In Stock3,188
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934061039112 by NXP Semiconductors

934061039112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Highest Frequency Band: S BAND;
A3T19H455W23SR6 by NXP Semiconductors

A3T19H455W23SR6

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RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PD54008-E by STMicroelectronics

PD54008-E

STMicroelectronics

STMicroelectronics PD54008-E is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage. It operates in ULTRA HIGH FREQUENCY BAND, suitable for AMPLIFIER applications. With 5A Drain Current and 73W Power Dissipation, it's ideal for high-power amplification needs.
MRF137 by M/a-com Technology Solutions

MRF137

M/a-com Technology Solutions

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
D2225UK by Tt Electronics Plc

D2225UK

Tt Electronics Plc

D2225UK by Tt Electronics Plc is an N-CHANNEL RF Power FET with 2 elements in a COMMON SOURCE configuration. It operates in the ULTRA HIGH FREQUENCY BAND, with a max ID of 4A and VDS of 40V. Ideal for AMPLIFIER applications, this transistor has GULL WING terminals and can withstand up to 200°C operating temperature.
A2T21S161W12SR3 by NXP Semiconductors

A2T21S161W12SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
LET9060F by STMicroelectronics

LET9060F

STMicroelectronics

LET9060F by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 12 A, breakdown voltage of 80 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max power dissipation of 130 W.
BLF278 by Rochester Electronics

BLF278

Rochester Electronics

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Minimum DS Breakdown Voltage: 125 V; Case Connection: SOURCE;
MRF1513T1 by NXP Semiconductors

MRF1513T1

NXP Semiconductors

NXP Semiconductors' MRF1513T1 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It features a max Drain Current of 2A, 31.2W Power Dissipation, and operates at up to 150°C temperature.
CGHV40100F by Wolfspeed

CGHV40100F

Wolfspeed

Wolfspeed's CGHV40100F is an N-CHANNEL RF FET with 150V DS breakdown voltage. Ideal for S BAND applications, it features GaN technology, 8.7A max drain current, and DEPLETION MODE operation in a FLANGE MOUNT package.
934061525112 by NXP Semiconductors

934061525112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 33 A; Package Shape: RECTANGULAR; Terminal Position: DUAL;
MRF6V12500HSR5 by Freescale Semiconductor

MRF6V12500HSR5

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Qualification: Not Qualified; Case Connection: SOURCE;
LET9120 by STMicroelectronics

LET9120

STMicroelectronics

LET9120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, breakdown voltage of 80 V, and operates in the L band. This surface-mount transistor excels in high-power scenarios with a dissipation of up to 200 W.
CGH40006S-AMP1 by Wolfspeed

CGH40006S-AMP1

Wolfspeed

RF Power Field-Effect Transistors;
MRF136Y by Tyco Electronics M/a-com

MRF136Y

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
AFT09S200W02GNR3 by NXP Semiconductors

AFT09S200W02GNR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; JESD-609 Code: e3; Terminal Finish: TIN;
A2G22S251-01SR3 by NXP Semiconductors

A2G22S251-01SR3

NXP Semiconductors

NXP Semiconductors A2G22S251-01SR3 is an N-CHANNEL RF Power FET with 150V DS Breakdown Voltage, 16.2 dB Power Gain for AMPLIFIER applications in S BAND. It operates in DEPLETION MODE, made of GALLIUM NITRIDE with max temp of 225°C and min temp of -55°C, suitable for surface mount with METAL-OXIDE SEMICONDUCTOR technology.
BLF878 by NXP Semiconductors

BLF878

NXP Semiconductors

The NXP Semiconductors BLF878 is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 89V. It operates in the Ultra High Frequency Band and features a COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR device has a FLANGE MOUNT package style and can withstand peak reflow temperatures up to 260°C.
BLF7G22LS-160,112 by Ampleon Netherlands B V

BLF7G22LS-160,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 36 A; Peak Reflow Temperature (C): NOT SPECIFIED;
PD84002 by STMicroelectronics

PD84002

STMicroelectronics

STMicroelectronics PD84002 is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage and 2A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it operates in ENHANCEMENT MODE with a max power dissipation of 6W.