NXP Semiconductors - 935427147528

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935427147528 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 935427147528
Description RF Power Field-Effect Transistors;
Datasheet 935427147528 Datasheet
In Stock119
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BLF6G15L-40BRN by NXP Semiconductors

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N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Terminal Position: QUAD; Transistor Application: AMPLIFIER;
PD60030 by STMicroelectronics

PD60030

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PD60030 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a 65V min DS breakdown voltage, operates in enhancement mode, and supports L band frequencies. Its compact surface mount design ensures efficient performance in various electronic devices.
MHT1008NT1 by NXP Semiconductors

MHT1008NT1

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NXP Semiconductors' MHT1008NT1 is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE with a 65V DS Breakdown Voltage and supports S BAND frequencies. The transistor has a max operating temperature of 150°C and comes in a SMALL OUTLINE package style.
A3T23H300W23SR6 by NXP Semiconductors

A3T23H300W23SR6

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RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
PD54003L by STMicroelectronics

PD54003L

STMicroelectronics

PD54003L by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 25 V, and operates in the ultra-high frequency band. This surface-mount transistor ensures efficient performance with a max temp of 150 °C.
VRF2933MP by Microsemi

VRF2933MP

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
AFT05MS031GNR1 by NXP Semiconductors

AFT05MS031GNR1

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 294 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: TIN;
CGHV40050P by Wolfspeed

CGHV40050P

Wolfspeed

CGHV40050P by Wolfspeed is an N-CHANNEL RF Power FET with a 150V DS Breakdown Voltage. Ideal for S BAND applications, it operates in DEPLETION MODE with a max ID of 6.3A and Crss of 0.3pF.
A2T21H140-24SR3 by NXP Semiconductors

A2T21H140-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
PTVA101K02EV-V1-R0 by Wolfspeed

PTVA101K02EV-V1-R0

Wolfspeed

PTVA101K02EV-V1-R0 by Wolfspeed is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage, 17dB Power Gain, and L BAND frequency. It is a COMMON SOURCE amplifier suitable for ENHANCEMENT MODE operation in applications requiring high power amplification in the L Band.
A2I25D025NR1 by Freescale Semiconductor

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STAC2933 by STMicroelectronics

STAC2933

STMicroelectronics

STAC2933 by STMicroelectronics is an N-CHANNEL RF Power FET with 40A max drain current and 795W max power dissipation. Ideal for high-power applications, it operates at up to 200 °C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR technology transistor offers reliable performance in demanding environments.
MRF171A by New Jersey Semiconductor Products

MRF171A

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Highest Frequency Band: VERY HIGH FREQUENCY BAND; No. of Elements: 1; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE;
SD2904 by STMicroelectronics

SD2904

STMicroelectronics

SD2904 by STMicroelectronics is an N-CHANNEL RF Power FET with 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 5A. This SINGLE configuration transistor is commonly used as an AMPLIFIER in various applications due to its SILICON element material and ENHANCEMENT MODE operation.
934061174118 by NXP Semiconductors

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
SD2921-10 by STMicroelectronics

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SD2921-10 by STMicroelectronics is an N-channel RF Power FET with 125V DS breakdown voltage and 20A max drain current. Ideal for UHF band applications, it operates in enhancement mode with a max power dissipation of 389W.
FLL57MK by Sumitomo Electric Industries

FLL57MK

Sumitomo Electric Industries

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Highest Frequency Band: L BAND; No. of Terminals: 2;
SD56120 by STMicroelectronics

SD56120

STMicroelectronics

SD56120 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications, featuring a max drain current of 14 A and a breakdown voltage of 65 V. It operates in enhancement mode within the ultra-high frequency band. This surface-mount device offers high power dissipation up to 217 W, ideal for demanding RF applications.
PTVA101K02EVV1R0XTMA1 by Infineon Technologies

PTVA101K02EVV1R0XTMA1

Infineon Technologies

Infineon's PTVA101K02EVV1R0XTMA1 is an N-CHANNEL RF Power FET with 105V DS Breakdown Voltage. It operates in L BAND, featuring COMMON SOURCE configuration for AMPLIFIER applications. This METAL-OXIDE SEMICONDUCTOR device has a max temp of 225°C and comes in a FLANGE MOUNT package shape.
MRF9030LR1 by Motorola

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Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 92 W; Operating Mode: ENHANCEMENT MODE; Package Shape: RECTANGULAR;