NXP Semiconductors - A3M39SL039I

Analog Devices' HMC441LP3E is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handling up to 15 dBm CW input power. This component is ideal for RF and microwave applications requiring surface mount technology in temperatures ranging from -40°C to +85°C.

WIDE BAND LOW POWER;

AMMC-6442-W50 by Broadcom is a wide band medium power RF amplifier with 20 dB gain. It operates b/w 37-40 GHz, handling up to 20 dBm CW input power. Ideal for RF applications requiring a 50 ohm characteristic impedance and powered by a 5V supply.

Analog Devices' HMC5805ALS6TR is a wide band low power RF amplifier with 9 dB gain and 22 dBm max input power. Operating from -40 to 85°C, it covers frequencies up to 40 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.

Broadcom's MGA-81563 is a GAAS RF amplifier with 6 terminals, operating from -40°C to 85°C. It requires 3V power supply, draws max 51mA current, and has a surface mount package. Ideal for applications requiring high-frequency signal amplification in various electronic devices.

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Package Equivalence Code: LCC24,.16SQ,20;

SGA-3363-TR1 by Rf Micro Devices is a wide band low power RF amplifier with 15.5 dB gain, operating from 0 to 3600 MHz. It has a max input power of 5 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

Analog Devices' HMC478MP86 is a wide band low power RF amplifier with 11 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 5 dBm CW input power. Ideal for RF applications requiring surface mount components in the -40°C to +85°C temperature range.

The Qorvo TQP3M9035 is a wide band medium power RF amplifier with 15 dB gain, suitable for frequencies ranging from 50 MHz to 6 GHz. It can handle up to 23 dBm of CW input power and operates in temperatures from -40°C to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 1500 MHz; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 50 MHz;

HMC565LC5TR by Analog Devices is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It has a max input power of 10 dBm and operates on a 3V supply, drawing 75 mA. Ideal for RF and microwave applications requiring high frequency amplification in compact designs.

TRF37C73IDSGT by Texas Instruments is a wide band low power RF amplifier with 18dB gain, operating from 1MHz to 6GHz. It has a max input power of 10dBm and operates on a 3.3V supply, suitable for applications requiring high frequency amplification in RF systems. The component comes in an 8-terminal plastic/epoxy package for surface mounting, making it ideal for various RF and microwave applications.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e0;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 5; Characteristic Impedance: 50 ohm;

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Minimum Operating Frequency: 7100 MHz; Minimum Operating Temperature: -40 Cel; Maximum Voltage Standing Wave Ratio: 2; Construction: COMPONENT;

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.

WIDE BAND LOW POWER; Maximum Operating Frequency: 18000 MHz; JESD-609 Code: e3; Minimum Operating Frequency: 6000 MHz; Maximum Operating Temperature: 85 Cel; Gain: 18 dB;