NXP Semiconductors - BF1105WR,135

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BF1105WR,135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BF1105WR,135
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BF1105WR,135 Datasheet
In Stock648
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .03 A
Maximum Drain Current (Abs) (ID): .03 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin (Sn)
JESD-609 Code: e3
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