NXP Semiconductors - BFE520-T

  1. Home
  2. NXP Semiconductors - BFE520-T
BFE520-T by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BFE520-T
Description NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
Datasheet BFE520-T Datasheet
In Stock1,193
NAME DESCRIPTION
Nominal Transition Frequency (fT): 9000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .07 A
Configuration: COMMON EMITTER, 2 ELEMENTS
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
No. of Terminals: 5
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 8 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: L BAND
Maximum Collector-Base Capacitance: .45 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,193 - -

Popular Products

Category Top Products

START420 by STMicroelectronics

START420

STMicroelectronics

START420 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, operates in the C band, and comes in a compact rectangular package with gull-wing terminals. Ideal for surface mount designs, it supports efficient signal amplification.
2N3866 by NXP Semiconductors

2N3866

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Collector Current (IC): .4 A; Maximum VCEsat: 1 V;
BF959G by Onsemi

BF959G

Onsemi

BF959G by Onsemi is a NPN RF BJT with 3 terminals. It operates in the VHF band, has hFE of 35, and can handle up to 1.5W power dissipation. Ideal for amplifier applications due to its high transition frequency of 700MHz and max collector current of 0.1A.
CA3083M by Intersil

CA3083M

Intersil

CA3083M by Intersil is a NPN BJT with 5 elements, ideal for high-frequency switching applications. With a max fT of 450 MHz and IC of 0.1 A, it operates in the VHF band and comes in a small outline package for surface mounting.
BFR92AW,135 by NXP Semiconductors

BFR92AW,135

NXP Semiconductors

NXP Semiconductors' BFR92AW,135 is an NPN RF BJT transistor with a max fT of 5000 MHz. It's ideal for ultra-high frequency band applications like amplifiers due to its small outline package and high hFE of 40. With a max power dissipation of 0.3 W and VCE of 15V, it operates at up to 150°C ambient temperature.
START450 by STMicroelectronics

START450

STMicroelectronics

START450 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max power dissipation of 0.45 W, operates up to 150 °C, and supports frequencies in the C band with a nominal transition frequency of 42 GHz. Its compact surface mount design ensures efficient performance in various electronic devices.
2N2369A by General Diode

2N2369A

General Diode

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .36 W; Maximum Collector Current (IC): .2 A;
MSC81002 by STMicroelectronics

MSC81002

STMicroelectronics

STMicroelectronics' MSC81002 is an NPN BJT transistor with 3 terminals, ideal for amplifier applications in L Band frequencies. With a max power dissipation of 6.3W and max collector current of 0.2A, it operates at up to 200 °C, featuring a ceramic-metal package body and silicon element material.
934067693115 by NXP Semiconductors

934067693115

NXP Semiconductors

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
MPS5179RLRM by Onsemi

MPS5179RLRM

Onsemi

MPS5179RLRM by Onsemi is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 900MHz. It is ideal for amplifier applications in the very high-frequency band, featuring a single configuration in a cylindrical package with through-hole terminals.
2N3010 by Texas Instruments

2N3010

Texas Instruments

2N3010 by Texas Instruments is a NPN BJT transistor with max. power dissipation of 0.3W, hFE of 25, and fT of 600MHz. Ideal for switching applications due to its max. collector-emitter voltage of 11V and max. collector current of 0.5A in a cylindrical package with wire terminals.
BFR96 by New Jersey Semiconductor Products

BFR96

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BFP183E7764HTSA1 by Infineon Technologies

BFP183E7764HTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
MPSH10 by Semiconductor Technology

MPSH10

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;
BFY90PBFREE by Central Semiconductor

BFY90PBFREE

Central Semiconductor

BFY90PBFREE by Central Semiconductor is an NPN BJT for AMPLIFIER applications. Features include Gp: 21 dB, fT: 1400 MHz, and hFE: 20. With a max operating temperature of 200°C, it has a package style of CYLINDRICAL and terminal finish of MATTE TIN OVER NICKEL.
BFR182E6327HTSA1 by Infineon Technologies

BFR182E6327HTSA1

Infineon Technologies

BFR182E6327HTSA1 by Infineon Technologies is an NPN RF BJT transistor with a max collector-emitter voltage of 12V and fT of 8000 MHz. It is designed for ultra-high frequency band applications, featuring a small outline package style and Gull Wing terminals. Ideal for amplifier circuits operating at temperatures up to 150°C.
3003 by Advanced Power Technology

3003

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL; Terminal Form: FLAT;
MSC80186 by STMicroelectronics

MSC80186

STMicroelectronics

MSC80186 by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector current of 0.5 A, operates up to 200 °C, and boasts a nominal transition frequency of 3200 MHz. Its ceramic, metal-sealed package ensures reliability in L-band operations.
BF824,215 by Nexperia

BF824,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .025 A; JESD-609 Code: e3;
BFR93AW by Siemens

BFR93AW

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Power Dissipation Ambient: .3 W;