STMicroelectronics - MSC82001

  1. Home
  2. STMicroelectronics - MSC82001
MSC82001 by STMicroelectronics

Image shown is a representation only.

Manufacturer STMicroelectronics
Manufacturer's Part Number MSC82001
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7 W; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
Datasheet MSC82001 Datasheet
In Stock4,476
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 15
No. of Terminals: 2
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 7 W
Terminal Position: RADIAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CRFM-F2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: L BAND
Maximum Operating Temperature: 200 Cel
Maximum Collector-Base Capacitance: 3.2 pF
Case Connection: BASE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,476 $158.042 $707,395.992

Popular Products

Category Top Products

934067706235 by NXP Semiconductors

934067706235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
SS9018HBU by Onsemi

SS9018HBU

Onsemi

SS9018HBU by Onsemi is a NPN RF Small Signal Bipolar Junction Transistor (BJT) with a max operating temperature of 150 °C. It has a min DC current gain (hFE) of 97 and a nominal transition frequency (fT) of 1100 MHz. This transistor is commonly used in amplifier applications.
BFS17 by ROHM

BFS17

ROHM

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;
UMX5NTR by ROHM

UMX5NTR

ROHM

ROHM UMX5NTR is an NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.15W and operates at up to 150°C. With a transition frequency of 3200MHz, it offers high performance in a small outline package suitable for surface mount assembly.
BFR35APE6327HTSA1 by Infineon Technologies

BFR35APE6327HTSA1

Infineon Technologies

BFR35APE6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 15V VCEO, 0.045A IC, and 5000MHz fT. Ideal for L Band applications, it's a single configuration amplifier in a small outline package suitable for surface mount technology.
MMBTH10 by Weitron Technology

MMBTH10

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
BFR92A by Vishay Semiconductors

BFR92A

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .03 A; No. of Terminals: 3;
MPSH11RLRA by Onsemi

MPSH11RLRA

Onsemi

MPSH11RLRA by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It operates at up to 150 °C, ideal for ultra-high frequency applications in electronics due to its low collector-base capacitance of 0.7pF. This through-hole transistor in a cylindrical package suits high-frequency band circuits.
MPSH17 by Onsemi

MPSH17

Onsemi

The Onsemi MPSH17 is an NPN RF BJT transistor with a max fT of 800 MHz. It has a max Vce of 15V and Pdiss of 0.625W, ideal for amplifier applications in the very high frequency band. The package is cylindrical with through-hole terminals, making it suitable for various electronic designs.
BFP740E6327 by Infineon Technologies

BFP740E6327

Infineon Technologies

BFP740E6327 by Infineon is a NPN RF BJT with 19.5 dB power gain, ideal for amplifier applications in C band frequencies. It features Gull Wing terminals, 160 min hFE, and can operate b/w -55 to 150 °C with a max collector-emitter voltage of 4 V.
START499 by STMicroelectronics

START499

STMicroelectronics

START499 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and a nominal transition frequency of 42 GHz. Its compact rectangular package supports surface mounting with gull-wing terminals. Ideal for ultra-high frequency circuits, it operates at a max collector-emitter voltage of 4.5 V.
2SC4399-3 by Onsemi

2SC4399-3

Onsemi

RF Small Signal Bipolar Transistors;
MMBTH10LT3 by Onsemi

MMBTH10LT3

Onsemi

MMBTH10LT3 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. Ideal for UHF applications, it comes in a small outline package with Gull Wing terminals, making it suitable for high-frequency circuit designs.
KSC1674-C by Onsemi

KSC1674-C

Onsemi

The Onsemi KSC1674-C is an NPN RF BJT transistor with a max VCEsat of 0.3V and fT of 600MHz. Ideal for amplifier applications, it has a max IC of 0.02A and operates up to 150 °C. Packaged in plastic/epoxy, it features a cylindrical shape with through-hole terminals.
BFR93A by NXP Semiconductors

BFR93A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;
SD1134-05 by STMicroelectronics

SD1134-05

STMicroelectronics

SD1134-05 by STMicroelectronics is a NPN RF BJT with 4 terminals, operating in the VHF band. It has a max power dissipation of 5W and can handle up to 0.75A collector current. Ideal for high-frequency applications requiring a single configuration transistor in a round plastic package.
MMBTH10 by Shanghai Lunsure Electronic Technology

MMBTH10

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;
NE85633-T1B-A by Renesas Electronics

NE85633-T1B-A

Renesas Electronics

NE85633-T1B-A by Renesas Electronics is a NPN BJT transistor for RF applications. It operates in the ultra high frequency band with a transition frequency of 7000 MHz. This single configuration transistor has a max collector-emitter voltage of 12V and is suitable for amplifier circuits in small outline packages.
NSF2250WT1 by Onsemi

NSF2250WT1

Onsemi

NSF2250WT1 by Onsemi is a NPN BJT transistor with 3 terminals, operating at max 150 °C. It has a transition frequency of 2300 MHz and can handle up to 0.05 A collector current. Ideal for ultra high frequency amplifier applications in small outline packages.
MPSH10 by Micro Electronics

MPSH10

Micro Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .04 A;