NXP Semiconductors - BGD502

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BGD502 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD502
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Maximum Input Power (CW): 16.25 dBm; Power Supplies (V): 24;
Datasheet BGD502 Datasheet
In Stock2,335
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 435 mA
JESD-609 Code: e4
Minimum Operating Temperature: -20 Cel
Maximum Input Power (CW): 16.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 550 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 18.8 dB
Power Supplies (V): 24
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