NXP Semiconductors - BGD712,112

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BGD712,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD712,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 410 mA; Gain: 19 dB; Minimum Operating Temperature: -20 Cel;
Datasheet BGD712,112 Datasheet
In Stock2,697
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 410 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 750 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 19 dB
Power Supplies (V): 24
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