NXP Semiconductors - BGD902,112

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BGD902,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGD902,112
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Frequency: 40 MHz; Power Supplies (V): 24; Maximum Supply Current: 435 mA;
Datasheet BGD902,112 Datasheet
In Stock680
NAME DESCRIPTION
Other Names: BGD902
BGD902-ND
934055123112
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 435 mA
Minimum Operating Temperature: -20 Cel
Maximum Input Power (CW): 16.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 900 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 18.2 dB
Power Supplies (V): 24
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