NXP Semiconductors - BGE885,112

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BGE885,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGE885,112
Description WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Minimum Operating Temperature: -20 Cel; Construction: MODULE; Minimum Operating Frequency: 40 MHz;
Datasheet BGE885,112 Datasheet
In Stock1,711
NAME DESCRIPTION
Other Names: 2156-BGE885112-NX
NXPNXPBGE885,112
568-5613
BGE885,112-ND
934005650112
954-BGE885112
BGE885
BGE885-ND
BGE885112
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 240 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115D
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 860 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 16.5 dB
Power Supplies (V): 24
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Pricing (USD)

Qty. Unit Price Ext. Price
1,711 $33.490 $57,301.390

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