NXP Semiconductors - BGF1901-10

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BGF1901-10 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGF1901-10
Description NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Operating Temperature: 85 Cel; Construction: COMPONENT; Power Supplies (V): 26;
Datasheet BGF1901-10 Datasheet
In Stock865
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: COMPONENT
Minimum Operating Frequency: 1930 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 280 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Maximum Voltage Standing Wave Ratio: 2
Package Equivalence Code: FLNG,1.6"H.SPACE
Technology: HYBRID
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 85 Cel
Maximum Operating Frequency: 1990 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Gain: 24 dB
Power Supplies (V): 26
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