NXP Semiconductors - BGR269

  1. Home
  2. NXP Semiconductors - BGR269
BGR269 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BGR269
Description WIDE BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Characteristic Impedance: 75 ohm; Power Supplies (V): 24; Minimum Operating Frequency: 5 MHz;
Datasheet BGR269 Datasheet
In Stock2,425
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 5 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 175 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 200 MHz
RF or Microwave Device Type: WIDE BAND HIGH POWER
Gain: 35 dB
Power Supplies (V): 24
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,425 - -

Popular Products

Category Top Products

MW7IC2725NBR1 by NXP Semiconductors

MW7IC2725NBR1

NXP Semiconductors

NXP Semiconductors' MW7IC2725NBR1 is a 50 ohm RF amplifier with 25.5 dB gain, operating from 2300-2700 MHz. It can handle up to 22 dBm CW input power and has a VSWR of 10, making it ideal for narrowband high-power applications in RF and microwave systems.
760 by Anaren

760

Anaren

RF/Microwave Amplifiers; No. of Terminals: 8; Package Body Material: METAL; Technology: HYBRID; Screening Level: 38535Q/M;38534H;883B; No. of Functions: 1;
SBB2089ZSR by Qorvo

SBB2089ZSR

Qorvo

Qorvo's SBB2089ZSR is a wide band low power RF amplifier with 18.5 dB gain, suitable for frequencies ranging from 50 MHz to 850 MHz. It operates at temperatures b/w -40°C to 85°C and can handle a max input power of 24 dBm. This component is ideal for applications requiring high performance in RF and microwave systems.
QPA2735TR7X by Qorvo

QPA2735TR7X

Qorvo

Qorvo's QPA2735TR7X is a GAAS RF amplifier with 26dB gain, operating from 13.75-18 GHz. It has a max input power of 20 dBm and operates on a 3.5V supply, ideal for wideband low-power applications in RF & microwave systems. The component features surface mounting and a plastic/epoxy package body material.
HMC311LP3ETR by Analog Devices

HMC311LP3ETR

Analog Devices

Analog Devices' HMC311LP3ETR is a GAAS RF amplifier with 12dB gain, 50 ohm impedance, and 10 dBm CW input power. It operates from 0 to 6000 MHz, drawing 74mA at 5V. Ideal for wideband low-power applications in temperatures ranging from -40°C to +85°C.
CMD318P3 by Qorvo

CMD318P3

Qorvo

WIDE BAND LOW POWER;
ZX60-2411BM-S+ by Mini-circuits

ZX60-2411BM-S+

Mini-circuits

Mini-circuits' ZX60-2411BM-S+ is a COAXIAL RF amplifier with 9 dB Gain, operating from 1900 MHz to 2400 MHz. It has a Max Input Power of 16 dBm and VSWR of 1.65, making it ideal for NARROW BAND LOW POWER applications in RF & Microwave systems.
XP1050-QJ-0G0T by M/a-com Technology Solutions

XP1050-QJ-0G0T

M/a-com Technology Solutions

XP1050-QJ-0G0T by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain. It operates b/w 7-9 GHz, handles up to 25 dBm CW input power, and can withstand temperatures from -40 to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.
MMG3H21NT1 by NXP Semiconductors

MMG3H21NT1

NXP Semiconductors

MMG3H21NT1 by NXP Semiconductors is a wide band medium power RF amplifier with 18.3 dB gain and 50 ohm impedance. It operates from 0 to 6000 MHz, handles up to 12 dBm input power, and draws a max of 110 mA at 5 V. Ideal for applications requiring high-frequency signal amplification in compact setups.
MSA-1105-STR by Hewlett Packard

MSA-1105-STR

Hewlett Packard

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB; Maximum Operating Frequency: 1300 MHz;
SKY65981-11 by Skyworks Solutions

SKY65981-11

Skyworks Solutions

NARROW BAND LOW POWER;
MAX2839ETN+T by Maxim Integrated

MAX2839ETN+T

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
CMPA0060025F1 by Wolfspeed

CMPA0060025F1

Wolfspeed

WIDE BAND HIGH POWER;
ADL9005ACPZN-R7 by Analog Devices

ADL9005ACPZN-R7

Analog Devices

ADL9005ACPZN-R7 by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 1.49 VSWR. Operating from 10 MHz to 26.5 GHz, it has a max input power of 22 dBm and operates on a 5V supply. Ideal for RF and microwave applications requiring high performance in a compact surface mount package.
TQL9063 by Qorvo

TQL9063

Qorvo

TQL9063 by Qorvo is a wide band medium power RF amplifier with 17.5 dB gain, operating from 500 MHz to 4000 MHz. It has a max input power of 22 dBm and VSWR of 2.01, suitable for surface mount applications in RF & microwave systems.
MGA-86576-STR by Agilent Technologies

MGA-86576-STR

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: METAL; Technology: GAAS; Characteristic Impedance: 50 ohm;
MAX2691EWS+T by Analog Devices

MAX2691EWS+T

Analog Devices

MAX2691EWS+T by Analog Devices is a BICMOS RF amplifier with 13.1 dB gain, operating at 1.8/3.3V. It is a wide band low power device suitable for surface mount applications in RF & Microwave systems, offering a characteristic impedance of 50 ohm and temperature range from -40 to 85°C.
BGU8052X by NXP Semiconductors

BGU8052X

NXP Semiconductors

WIDE BAND LOW POWER;
MD7IC2012GNR1,528 by NXP Semiconductors

MD7IC2012GNR1,528

NXP Semiconductors

NARROW BAND HIGH POWER;
MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.