NXP Semiconductors - BGX885N

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BGX885N by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGX885N
Description WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Maximum Supply Current: 240 mA; Power Supplies (V): 24; Maximum Operating Frequency: 860 MHz;
Datasheet BGX885N Datasheet
In Stock369
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 240 mA
Minimum Operating Temperature: -20 Cel
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE, HIGH RELIABILITY
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 860 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 17.3 dB
Power Supplies (V): 24
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