NXP Semiconductors - BGY587B,112

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BGY587B,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BGY587B,112
Description WIDE BAND MEDIUM POWER; Package Body Material: PLASTIC/EPOXY; Technology: HYBRID; Construction: MODULE; Additional Features: LOW NOISE; Power Supplies (V): 24;
Datasheet BGY587B,112 Datasheet
In Stock1,132
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Construction: MODULE
Minimum Operating Frequency: 40 MHz
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 340 mA
Minimum Operating Temperature: -20 Cel
No. of Functions: 1
Maximum Input Power (CW): 6.25 dBm
Package Equivalence Code: SOT-115J
Technology: HYBRID
Characteristic Impedance: 75 ohm
Additional Features: LOW NOISE
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 550 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Gain: 27.5 dB
Power Supplies (V): 24
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