NXP Semiconductors - BLC9G20LS-240PV

  1. Home
  2. NXP Semiconductors - BLC9G20LS-240PV
BLC9G20LS-240PV by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLC9G20LS-240PV
Description RF Power Field-Effect Transistors;
Datasheet BLC9G20LS-240PV Datasheet
In Stock3,292
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,292 - -

Popular Products

Category Top Products

FLL177ME by Fujitsu

FLL177ME

Fujitsu

Fujitsu FLL177ME is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring DEPLETION MODE operation, it offers 7.5W Max Power Dissipation at 175°C max temp, housed in a CERAMIC/METAL-SEALED COFIRED package with FLANGE MOUNT style.
MRF7P20040HSR3 by NXP Semiconductors

MRF7P20040HSR3

NXP Semiconductors

NXP's MRF7P20040HSR3 is a ceramic-metal sealed RF FET with N-channel, common source configuration. Ideal for amplifier applications in S band frequencies, it operates at max 225°C with 65V breakdown voltage. This flatpack transistor has 2 elements, 4 terminals, and uses MOSFET technology.
MRF136 by Motorola

MRF136

Motorola

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 200 Cel; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
SD56150 by STMicroelectronics

SD56150

STMicroelectronics

SD56150 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 17 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact flange mount design ensures efficient performance in various electronic devices.
MRF1517NT1 by Freescale Semiconductor

MRF1517NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 62.5 W; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 3;
LET8180 by STMicroelectronics

LET8180

STMicroelectronics

LET8180 by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 18 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its robust design supports high power dissipation up to 289 W.
PD20010STR-E by STMicroelectronics

PD20010STR-E

STMicroelectronics

PD20010STR-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 5 A, a breakdown voltage of 40 V, and operates in the L band. This surface-mount transistor ensures efficient performance with a max power dissipation of 59 W.
934061844118 by NXP Semiconductors

934061844118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 3.5 A; Terminal Position: DUAL; Transistor Application: AMPLIFIER;
NE5550779A-A by Renesas Electronics

NE5550779A-A

Renesas Electronics

NE5550779A-A by Renesas Electronics is a N-CHANNEL RF Power FET with 2.1A max drain current and 17.8W power dissipation. Ideal for high-power applications in METAL-OXIDE SEMICONDUCTOR technology, it operates up to 150°C, making it suitable for various RF power amplification needs.
PD57030S by STMicroelectronics

PD57030S

STMicroelectronics

PD57030S by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. Its compact surface mount design ensures efficient performance in various electronic devices.
IXZ210N50L by IXYS Corporation

IXZ210N50L

IXYS Corporation

IXZ210N50L by IXYS is a N-CHANNEL FET with 500V DS breakdown voltage, ideal for amplifier applications. Operating in enhancement mode, it offers 10A max drain current and can handle up to 175°C temperature. This RF transistor has a small outline package style and is suitable for very high frequency band usage.
MRF136Y by Tyco Electronics M/a-com

MRF136Y

Tyco Electronics M/a-com

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Package Shape: RECTANGULAR; No. of Elements: 2;
AFT05MS004NT1 by Freescale Semiconductor

AFT05MS004NT1

Freescale Semiconductor

RF Power Field-Effect Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN;
A2I25D012NR1 by NXP Semiconductors

A2I25D012NR1

NXP Semiconductors

RF Power Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
A3T18H400W23SR6 by NXP Semiconductors

A3T18H400W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Style (Meter): FLATPACK; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE;
MRF134 by Tyco Electronics M/a-com

MRF134

Tyco Electronics M/a-com

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; No. of Terminals: 4; Terminal Form: FLAT; No. of Elements: 1;
PD55003TR-E by STMicroelectronics

PD55003TR-E

STMicroelectronics

STMicroelectronics PD55003TR-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage and 2.5A Drain Current. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features ENHANCEMENT MODE operation, 31.7W Power Dissipation, and operates up to 165°C temperature.
BLF888BS,112 by Ampleon Netherlands B V

BLF888BS,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Package Style (Meter): FLATPACK; Terminal Position: DUAL;
A2T07D160W04SR3 by NXP Semiconductors

A2T07D160W04SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;