NXP Semiconductors - BLD6G22L-50

  1. Home
  2. NXP Semiconductors - BLD6G22L-50
BLD6G22L-50 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLD6G22L-50
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: FLAT; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLD6G22L-50 Datasheet
In Stock1,190
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 10.2 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F4
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Maximum Operating Temperature: 200 Cel
Case Connection: SOURCE
Peak Reflow Temperature (C): NOT SPECIFIED
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,190 - -

Popular Products

Category Top Products

TRF7003PKR by Texas Instruments

TRF7003PKR

Texas Instruments

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
A3G26H200W17S by NXP Semiconductors

A3G26H200W17S

NXP Semiconductors

RF Power Field-Effect Transistors;
ST50V10200 by STMicroelectronics

ST50V10200

STMicroelectronics

RF Power Field-Effect Transistors;
SD2902 by STMicroelectronics

SD2902

STMicroelectronics

SD2902 by STMicroelectronics is an N-CHANNEL RF Power FET with a 65V DS Breakdown Voltage. It operates in the ULTRA HIGH FREQUENCY BAND, ideal for AMPLIFIER applications. Featuring a max Drain Current of 2.5A, this METAL-OXIDE SEMICONDUCTOR FET has a PLASTIC/EPOXY package and can withstand temperatures up to 200 °C.
AFT27S006NT1 by NXP Semiconductors

AFT27S006NT1

NXP Semiconductors

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.
A5G35H120NT2 by NXP Semiconductors

A5G35H120NT2

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
AFT09MS007NT1 by Freescale Semiconductor

AFT09MS007NT1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 182 W; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 150 Cel;
CGHV1F006S by Wolfspeed

CGHV1F006S

Wolfspeed

CGHV1F006S by Wolfspeed is an N-CHANNEL RF Power FET with a 100V DS Breakdown Voltage. Ideal for KU BAND applications, it features Gallium Nitride technology, 0.95A Drain Current, and operates in DEPLETION MODE. This SMALL OUTLINE transistor has 12 terminals and is suitable for AMPLIFIER use.
RD00HHS1-101 by Mitsubishi Electric

RD00HHS1-101

Mitsubishi Electric

RD00HHS1-101 by Mitsubishi Electric is a N-CHANNEL RF FET with 30V DS breakdown voltage, suitable for amplifier applications. Operating in enhancement mode, it offers 0.2A max drain current and 3.1W power dissipation at 150°C max temperature. Ideal for high frequency band circuits due to its small outline package style.
A3T18H408W24SR3 by NXP Semiconductors

A3T18H408W24SR3

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD55003 by STMicroelectronics

PD55003

STMicroelectronics

STMicroelectronics PD55003 is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, suitable for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with 2.5A Drain Current and 31.7W Power Dissipation in a SMALL OUTLINE package.
PD55008L-E by STMicroelectronics

PD55008L-E

STMicroelectronics

STMicroelectronics' PD55008L-E is an N-CHANNEL RF Power FET with 40V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY, it offers 5A Drain Current and 19.5W Power Dissipation in a SQUARE PLASTIC package with NO LEAD terminals.
RF5L10111K0CB4 by STMicroelectronics

RF5L10111K0CB4

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
AFT09H310-04GSR6 by NXP Semiconductors

AFT09H310-04GSR6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
GS61008T-MR by Gan Systems

GS61008T-MR

Gan Systems

GS61008T-MR by Gan Systems is an N-CHANNEL RF FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for SWITCHING applications at 100V DS Breakdown Voltage. With GALLIUM NITRIDE technology, it handles up to 90A ID and supports VERY HIGH FREQUENCY BAND operations.
TSD2922 by STMicroelectronics

TSD2922

STMicroelectronics

TSD2922 by STMicroelectronics is an N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 125V. Operating in the Ultra High Frequency Band, it has a max temperature of 200 °C. This transistor is commonly used in applications requiring high power and frequency performance, such as telecommunications and radar systems.
MRFE6VP61K25HR6 by Freescale Semiconductor

MRFE6VP61K25HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1300 W; Maximum Time At Peak Reflow Temperature (s): 40; No. of Terminals: 4;
934064592118 by NXP Semiconductors

934064592118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): 28 A; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRFE6VP5300NR1 by NXP Semiconductors

MRFE6VP5300NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: TIN;
BLF6G10S-45,112 by NXP Semiconductors

BLF6G10S-45,112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;