NXP Semiconductors - BLF276

BLF276 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF276
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 6; Minimum DS Breakdown Voltage: 110 V; Maximum Drain Current (ID): 9 A;
Datasheet BLF276 Datasheet
In Stock1,892
NAME DESCRIPTION
Minimum Power Gain (Gp): 13 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 9 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 110 V
Qualification: Not Qualified
Terminal Position: UNSPECIFIED
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CXDB-F6
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Maximum Power Dissipation Ambient: 150 W
Maximum Drain-Source On Resistance: .6 ohm
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