NXP Semiconductors - BLF542

BLF542 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF542
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; Minimum DS Breakdown Voltage: 65 V; Maximum Drain Current (ID): 1.5 A;
Datasheet BLF542 Datasheet
In Stock162
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1.5 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Maximum Power Dissipation Ambient: 20 W
Maximum Drain-Source On Resistance: 5 ohm
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Minimum Power Gain (Gp): 13 dB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.5 A
Peak Reflow Temperature (C): NOT SPECIFIED
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