NXP Semiconductors - BLF6G10S-45,112

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BLF6G10S-45,112 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF6G10S-45,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON;
Datasheet BLF6G10S-45,112 Datasheet
In Stock2,174
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 13 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): FLATPACK
JESD-30 Code: R-CDFP-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 225 Cel
Case Connection: SOURCE
Moisture Sensitivity Level (MSL): NOT APPLICABLE
Other Names: 2156-BLF6G10S-45,112
BLF6G10S-45-ND
568-8639
BLF6G10S45112
BLF6G10S-45
934061036112
BLF6G10S-45,112-ND
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 13 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
2,174 $49.840 $108,352.160

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