NXP Semiconductors - BLF7G22L-130N

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BLF7G22L-130N by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF7G22L-130N
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
Datasheet BLF7G22L-130N Datasheet
In Stock1,341
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 28 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 65 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-CDFM-F2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: S BAND
Case Connection: SOURCE
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