NXP Semiconductors - BLF8G24LS-200PN

  1. Home
  2. NXP Semiconductors - BLF8G24LS-200PN
BLF8G24LS-200PN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G24LS-200PN
Description RF Power Field-Effect Transistors;
Datasheet BLF8G24LS-200PN Datasheet
In Stock1,416
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,416 - -

Popular Products

Category Top Products

934056468112 by NXP Semiconductors

934056468112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 245; Highest Frequency Band: L BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
VRF2933MP by Microsemi

VRF2933MP

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 200 Cel; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
FLC107WG by Fujitsu

FLC107WG

Fujitsu

FLC107WG by Fujitsu is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. It has a max power dissipation of 7.5W and can handle high frequencies up to C BAND. Ideal for applications requiring high-power amplification in the RF communication systems.
RD15HVF1 by Mitsubishi Electric

RD15HVF1

Mitsubishi Electric

RD15HVF1 by Mitsubishi Electric is an N-CHANNEL RF Power FET with a 30V DS Breakdown Voltage, suitable for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND. It has a max Drain Current of 4A, power dissipation of 48W, and operates in ENHANCEMENT MODE at up to 150°C temperature.
BLF177 by New Jersey Semiconductor Products

BLF177

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
A3T23H300W23SR6 by NXP Semiconductors

A3T23H300W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
MRF300AN-81MHZ by NXP Semiconductors

MRF300AN-81MHZ

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
PD55035STR1-E by STMicroelectronics

PD55035STR1-E

STMicroelectronics

RF Power Field-Effect Transistors;
MRF186 by Motorola

MRF186

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified; Transistor Element Material: SILICON;
A2I22D050NR1 by NXP Semiconductors

A2I22D050NR1

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; JESD-609 Code: e3;
MRF6522-70 by Motorola

MRF6522-70

Motorola

MRF6522-70 by Motorola is an N-channel RF Power FET with 65V DS breakdown voltage, suitable for amplifier applications in the UHF band. It operates in enhancement mode, with a max drain current of 7A and can withstand temperatures up to 200°C. The transistor features a ceramic-metal sealed co-fired package and is designed for surface mount installation.
MRF151G by Asi Semiconductor

MRF151G

Asi Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Transistor Element Material: SILICON; Maximum Drain Current (Abs) (ID): 40 A;
934061172135 by NXP Semiconductors

934061172135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 2; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
MRF6V2150NR1 by Freescale Semiconductor

MRF6V2150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
935439205515 by NXP Semiconductors

935439205515

NXP Semiconductors

RF Power Field-Effect Transistors;
CGH40006S by Wolfspeed

CGH40006S

Wolfspeed

CGH40006S by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage, ideal for C BAND applications. Featuring Gallium Nitride technology, it operates in Enhancement Mode with a SINGLE configuration and SMALL OUTLINE package style for surface mount assembly.
TIM3742-8UL by Toshiba

TIM3742-8UL

Toshiba

Toshiba's TIM3742-8UL is an N-channel RF Power FET with a 15V DS breakdown voltage, ideal for amplifier applications in the C band. Featuring a single configuration, it has a max drain current of 7A and operates in depletion mode. With a package style of flange mount and metal-oxide semiconductor technology, it offers high power dissipation up to 37.5W at a max temp of 175°C.
934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
A3T18H360W23SR6 by NXP Semiconductors

A3T18H360W23SR6

NXP Semiconductors

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: QUAD; Minimum Operating Temperature: -40 Cel;
A2T26H160-24SR3 by NXP Semiconductors

A2T26H160-24SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;