NXP Semiconductors - BLF8G24LS-200PN

  1. Home
  2. NXP Semiconductors - BLF8G24LS-200PN
BLF8G24LS-200PN by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G24LS-200PN
Description RF Power Field-Effect Transistors;
Datasheet BLF8G24LS-200PN Datasheet
In Stock1,416
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,416 - -

Popular Products

Category Top Products

934065321118 by NXP Semiconductors

934065321118

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: DUAL; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
PD55003L by STMicroelectronics

PD55003L

STMicroelectronics

STMicroelectronics PD55003L is an N-CHANNEL RF Power FET in PLASTIC/EPOXY package. It operates in ENHANCEMENT MODE for AMPLIFIER applications at ULTRA HIGH FREQUENCY BAND. With 40V DS Breakdown Voltage, it has a max ID of 2.5A and can dissipate up to 26.6W power at 150°C.
FLC107WG by Fujitsu

FLC107WG

Fujitsu

FLC107WG by Fujitsu is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, operating in DEPLETION MODE. It has a max power dissipation of 7.5W and can handle high frequencies up to C BAND. Ideal for applications requiring high-power amplification in the RF communication systems.
MRF6V2150NR1 by Freescale Semiconductor

MRF6V2150NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Minimum DS Breakdown Voltage: 110 V; Qualification: Not Qualified;
AFT09MS031NR1 by NXP Semiconductors

AFT09MS031NR1

NXP Semiconductors

AFT09MS031NR1 by NXP is an N-CHANNEL RF Power FET with 317W power dissipation. It operates at a max temp of 150°C, ideal for high-power RF applications. With surface mount capability and MSL level 3, it offers efficient performance in various electronic devices.
933817030112 by NXP Semiconductors

933817030112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; No. of Elements: 1; Minimum DS Breakdown Voltage: 65 V;
A5G26S008NT6 by NXP Semiconductors

A5G26S008NT6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3;
A2T18S160W31SR3 by NXP Semiconductors

A2T18S160W31SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;
RF5L15030CB2 by STMicroelectronics

RF5L15030CB2

STMicroelectronics

RF Power Field-Effect Transistors;
MRFE6VP8600HR5 by Freescale Semiconductor

MRFE6VP8600HR5

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 1052 W; Operating Mode: ENHANCEMENT MODE; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
AFT27S006NT1 by NXP Semiconductors

AFT27S006NT1

NXP Semiconductors

NXP Semiconductors' AFT27S006NT1 is a single N-channel RF Power FET with 21 dB min power gain, operating in the ultra-high frequency band. This enhancement mode transistor has a max power dissipation of 1.5W and operates b/w -40 to 150°C. It is commonly used in applications requiring high-frequency signal amplification and transmission.
CGHV1F025S by Wolfspeed

CGHV1F025S

Wolfspeed

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
CG2H40025F by Wolfspeed

CG2H40025F

Wolfspeed

CG2H40025F by Wolfspeed is an N-CHANNEL RF Power FET with a 84V DS Breakdown Voltage and 13dB Power Gain, ideal for AMPLIFIER applications in C BAND. Featuring Gallium Nitride technology, it operates from -40 to 150 °C with a max ID of 3A and Crss of 0.4pF.
BLF177 by Ampleon Netherlands B V

BLF177

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Reference Standard: IEC-60134; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: .3 ohm;
BLF6G15L-500H by NXP Semiconductors

BLF6G15L-500H

NXP Semiconductors

BLF6G15L-500H by NXP is an N-channel RF power FET designed for switching applications. It features a 100V min DS breakdown voltage, operates in the L band, and supports a max drain current of 45A. Ideal for high-frequency amplification in communication systems.
934061844112 by NXP Semiconductors

934061844112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; JESD-30 Code: R-CDSO-F2; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
934064635112 by NXP Semiconductors

934064635112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Package Shape: RECTANGULAR; Package Style (Meter): FLATPACK;
A5G35H120NT2 by NXP Semiconductors

A5G35H120NT2

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40; Moisture Sensitivity Level (MSL): 3;
CG2H40035F by Wolfspeed

CG2H40035F

Wolfspeed

CG2H40035F by Wolfspeed is a N-CHANNEL RF Power FET with a min DS Breakdown Voltage of 84V and a min Power Gain (Gp) of 13.5dB. It is commonly used as an amplifier in C Band applications.
934055708135 by NXP Semiconductors

934055708135

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): 2.2 A;