NXP Semiconductors - BLF8G27LS-100PU

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BLF8G27LS-100PU by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLF8G27LS-100PU
Description N-CHANNEL; Maximum Power Dissipation (Abs): 25 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 225 Cel; Maximum Drain Current (Abs) (ID): .86 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet BLF8G27LS-100PU Datasheet
In Stock4,587
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 25 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 225 Cel
Maximum Drain Current (ID): .86 A
Maximum Drain Current (Abs) (ID): .86 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
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