BLL6H1214-500 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BLL6H1214-500
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-CDFM-F4; Minimum DS Breakdown Voltage: 100 V;
Datasheet	BLL6H1214-500 Datasheet
In Stock	212

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	45 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	L BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Peak Reflow Temperature (C):	NOT SPECIFIED
Moisture Sensitivity Level (MSL):	NOT APPLICABLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
212	-	-

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