NXP Semiconductors - BLL6H1214L-250,112

  1. Home
  2. NXP Semiconductors - BLL6H1214L-250,112
BLL6H1214L-250,112 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLL6H1214L-250,112
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;
Datasheet BLL6H1214L-250,112 Datasheet
In Stock3,310
NAME DESCRIPTION
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 200 Cel
Maximum Drain Current (ID): 42 A
Maximum Drain Current (Abs) (ID): 42 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,310 $358.080 $1,185,244.800

Popular Products

Category Top Products

FQD12N20LTM by Onsemi

FQD12N20LTM

Onsemi

FQD12N20LTM by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 36A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.32 ohm RDS(on), and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 55W and can withstand temperatures from -55 to 150°C.
IRF9530 by Fairchild Semiconductor

IRF9530

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML2502GTRPBF by International Rectifier

IRLML2502GTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Terminal Position: DUAL; Maximum Pulsed Drain Current (IDM): 33 A;
NVTFS5116PLTAG by Onsemi

NVTFS5116PLTAG

Onsemi

NVTFS5116PLTAG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 126A IDM, and 0.072ohm RDS(on). Ideal for power management applications in small outline packages. Operating at up to 175°C, it features a built-in diode and avalanche energy rating of 45mJ.
AUIRF3205 by International Rectifier

AUIRF3205

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 75 A; Maximum Drain Current (Abs) (ID): 75 A;
MRF151G by TE Connectivity

MRF151G

TE Connectivity

TE Connectivity's MRF151G is a N-CHANNEL FET with 40A ID and 500W power dissipation. Ideal for high-power applications, it operates in enhancement mode with a max temp of 150°C.
AO4490L by Alpha & Omega Semiconductor

AO4490L

Alpha & Omega Semiconductor

AO4490L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has a max power dissipation of 2.8W and can handle up to 16A drain current.
IRFR5410TRPBF by International Rectifier

IRFR5410TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 66 W; Avalanche Energy Rating (EAS): 194 mJ; Additional Features: HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE;
FDD4685 by Fairchild Semiconductor

FDD4685

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 69 W; Maximum Operating Temperature: 150 Cel; Maximum Feedback Capacitance (Crss): 205 pF;
NTBG020N120SC1 by Onsemi

NTBG020N120SC1

Onsemi

NTBG020N120SC1 by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 98A, Avalanche Energy Rating of 264mJ, and Operating Temperature up to 175°C. This SINGLE configuration transistor has GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology in a RECTANGULAR package.
FQD7P20TM by Onsemi

FQD7P20TM

Onsemi

FQD7P20TM by Onsemi is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C.
IPD50P04P4L11ATMA2 by Infineon Technologies

IPD50P04P4L11ATMA2

Infineon Technologies

Infineon's IPD50P04P4L11ATMA2 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 200A IDM, and 0.0106 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and 58W power dissipation.
STW4N150 by STMicroelectronics

STW4N150

STMicroelectronics

STW4N150 by STMicroelectronics is a N-CHANNEL FET with 1500V DS breakdown voltage, ideal for SWITCHING applications. It features 12A max pulsed drain current and 350mJ avalanche energy rating. The transistor operates in ENHANCEMENT MODE with 160W max power dissipation, making it suitable for high-power switching circuits.
STP80NF10 by STMicroelectronics

STP80NF10

STMicroelectronics

STP80NF10 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 320A IDM, 350mJ EAS, and 0.015 ohm RDS(ON). With a max power dissipation of 300W and operating temperature up to 175°C, it's suitable for high-power circuits.
IRF640STRRPBF by Vishay Intertechnology

IRF640STRRPBF

Vishay Intertechnology

Vishay Intertechnology's IRF640STRRPBF is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It has a max Drain Current of 18A and Pulsed Drain Current of 72A, suitable for SWITCHING applications. The transistor operates in ENHANCEMENT MODE, with a power dissipation of 130W in a SMALL OUTLINE package style.
2N7002DW by Diodes Incorporated

2N7002DW

Diodes Incorporated

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Finish: Tin/Lead (Sn/Pb); Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
CPH6354-TL-W by Onsemi

CPH6354-TL-W

Onsemi

Onsemi's CPH6354-TL-W is a P-CHANNEL FET with 60V DS breakdown voltage, 16A IDM, and 0.1 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, it features GULL WING terminals and operates in SMALL OUTLINE package style.
IRFP460 by Vishay Intertechnology

IRFP460

Vishay Intertechnology

Vishay Intertechnology's IRFP460 is a N-CHANNEL FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 80A IDM, 960mJ EAS, and 0.27 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 280W at up to 150°C.
BS170 by Philips Semiconductors

BS170

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFP460 by International Rectifier

IRFP460

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Operating Mode: ENHANCEMENT MODE; JEDEC-95 Code: TO-247AC;