NXP Semiconductors - BLM7G1822S-40AB

  1. Home
  2. NXP Semiconductors - BLM7G1822S-40AB
BLM7G1822S-40AB by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLM7G1822S-40AB
Description RF Power Field-Effect Transistors;
Datasheet BLM7G1822S-40AB Datasheet
In Stock4,503
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
4,503 - -

Popular Products

Category Top Products

BLF6G27-10G by NXP Semiconductors

BLF6G27-10G

NXP Semiconductors

NXP Semiconductors' BLF6G27-10G is a single N-channel RF Power FET with 65V DS breakdown voltage. It operates in enhancement mode for S band applications, offering 3.5A max drain current and can withstand up to 225°C operating temperature. Ideal for amplifier circuits requiring high-frequency performance.
MRF136 by Asi Semiconductor

MRF136

Asi Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Elements: 1;
A2G35S160-01SR3 by NXP Semiconductors

A2G35S160-01SR3

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
RF2L42008CG2 by STMicroelectronics

RF2L42008CG2

STMicroelectronics

RF Power Field-Effect Transistors;
CLF1G0035-50,112 by Ampleon Netherlands B V

CLF1G0035-50,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: S BAND; Transistor Element Material: GALLIUM NITRIDE; Terminal Form: FLAT;
MRF300BN by NXP Semiconductors

MRF300BN

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF177 by New Jersey Semiconductor Products

BLF177

New Jersey Semiconductor Products

N-CHANNEL; Configuration: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Drain Current (ID): 16 A; Operating Mode: ENHANCEMENT MODE;
PD54008TR-E by STMicroelectronics

PD54008TR-E

STMicroelectronics

PD54008TR-E by STMicroelectronics is an N-CHANNEL RF Power FET with 25V DS Breakdown Voltage, ideal for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND, with a max ID of 5A and 73W power dissipation. The transistor features GULL WING terminals, METAL-OXIDE SEMICONDUCTOR technology, and can withstand temperatures up to 165°C.
A2I22D050GNR1 by NXP Semiconductors

A2I22D050GNR1

NXP Semiconductors

RF Power Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; JESD-609 Code: e3;
MRF8P29300HR6 by Freescale Semiconductor

MRF8P29300HR6

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
AFT09H310-04GSR6 by NXP Semiconductors

AFT09H310-04GSR6

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Maximum Operating Temperature: 225 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260; No. of Elements: 1;
935439205515 by NXP Semiconductors

935439205515

NXP Semiconductors

RF Power Field-Effect Transistors;
MRF136Y by Motorola

MRF136Y

Motorola

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Terminal Position: DUAL; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): FLANGE MOUNT;
PD57006TR-E by STMicroelectronics

PD57006TR-E

STMicroelectronics

PD57006TR-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a max drain current of 1 A, a breakdown voltage of 65 V, and operates in the ultra-high frequency band. This surface-mount transistor excels in compact designs with high power dissipation up to 20 W.
PD55003-E by STMicroelectronics

PD55003-E

STMicroelectronics

STMicroelectronics PD55003-E is an N-CHANNEL RF Power FET for AMPLIFIER applications. It operates in ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND with 40V DS Breakdown Voltage and 2.5A Drain Current. The PLASTIC/EPOXY package features GULL WING terminals, SMALL OUTLINE style, and can handle up to 31.7W power dissipation at 165°C max temperature.
CGH40006S-TB by Wolfspeed

CGH40006S-TB

Wolfspeed

CGH40006S-TB by Wolfspeed is an N-CHANNEL RF Power FET with a 120V DS Breakdown Voltage. It operates in the C BAND frequency range and features Gallium Nitride technology. Ideal for amplifier applications, this transistor comes in a small outline package suitable for surface mount installations.
934065231112 by NXP Semiconductors

934065231112

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 65 V; Transistor Element Material: SILICON;
A3G35H100-04SR3 by NXP Semiconductors

A3G35H100-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Position: DUAL; Maximum Operating Temperature: 225 Cel;
RF5L05750CF2 by STMicroelectronics

RF5L05750CF2

STMicroelectronics

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Terminal Finish: Nickel/Gold/Cobalt (Ni/Au/Co);
FLL177ME by Fujitsu

FLL177ME

Fujitsu

Fujitsu FLL177ME is an N-CHANNEL RF Power FET with 15V DS Breakdown Voltage, ideal for AMPLIFIER applications in L BAND. Featuring DEPLETION MODE operation, it offers 7.5W Max Power Dissipation at 175°C max temp, housed in a CERAMIC/METAL-SEALED COFIRED package with FLANGE MOUNT style.