NXP Semiconductors - BLU30/28

  1. Home
  2. NXP Semiconductors - BLU30/28
BLU30/28 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number BLU30/28
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
Datasheet BLU30/28 Datasheet
In Stock3,047
NAME DESCRIPTION
Minimum Power Gain (Gp): 8 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): 4 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 20
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 32 V
Terminal Position: UNSPECIFIED
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-CXFM-F6
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: ISOLATED
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
3,047 - -

Popular Products

Category Top Products

TAN15 by Advanced Power Technology

TAN15

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
BLV25 by NXP Semiconductors

BLV25

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 17.5 A;
2SC5551AE-TD-E by Onsemi

2SC5551AE-TD-E

Onsemi

RF Power Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;
MRF658 by Motorola

MRF658

Motorola

MRF658 by Motorola is a NPN RF BJT transistor with 4.15 dB min power gain, suitable for amplifier applications in the ultra-high frequency band. It has a max power dissipation of 175 W, operates at up to 150°C, and can handle a collector current of 15 A.
SD1534-01 by STMicroelectronics

SD1534-01

STMicroelectronics

STMicroelectronics' SD1534-01 is an NPN RF BJT transistor with 5.5A IC, 219W Pd, and L Band frequency range. Ideal for amplifier applications, it comes in a plastic/epoxy package with flat terminals and operates up to 200 °C.
BLS2731-10,114 by NXP Semiconductors

BLS2731-10,114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS; JESD-30 Code: R-CDFM-F2;
PH1214-110M by Tyco Electronics M/a-com

PH1214-110M

Tyco Electronics M/a-com

NPN; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Qualification: Not Qualified; Highest Frequency Band: L BAND;
934055198114 by NXP Semiconductors

934055198114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Case Connection: BASE;
2SC2381 by Toshiba

2SC2381

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT; Terminal Form: FLAT;
BLV2048 by NXP Semiconductors

BLV2048

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 500 W; Maximum Collector Current (IC): 20 A; Package Shape: RECTANGULAR;
SD1398 by STMicroelectronics

SD1398

STMicroelectronics

SD1398 by STMicroelectronics is a NPN RF Power BJT with 6 terminals and 53W power dissipation. Ideal for amplifiers in the UHF band, it has a max operating temp of 200 °C and max collector-emitter voltage of 24V. Suitable for surface mount applications with flat terminals.
2SC4201 by Toshiba

2SC4201

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .5 A; Transistor Application: SWITCHING;
LLE18300X by NXP Semiconductors

LLE18300X

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 6 A; Package Shape: RECTANGULAR;
PTB23002U by NXP Semiconductors

PTB23002U

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5 W; Maximum Collector Current (IC): .25 A; Qualification: Not Qualified;
934055937114 by NXP Semiconductors

934055937114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; Case Connection: BASE; Transistor Application: AMPLIFIER;
AM2729-110 by STMicroelectronics

AM2729-110

STMicroelectronics

STMicroelectronics' AM2729-110 is a NPN RF BJT transistor with 6.5 dB min power gain, ideal for S Band applications. It has a max power dissipation of 438W, operating temperature up to 250 °C, and can handle a collector current of 12A.
934045800114 by NXP Semiconductors

934045800114

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; JESD-30 Code: R-CDFM-F2; Terminal Form: FLAT;
2N6080 by Microsemi

2N6080

Microsemi

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): 12 W; Maximum Collector Current (IC): 1 A;
BLV57 by NXP Semiconductors

BLV57

NXP Semiconductors

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): 77 W; Maximum Collector Current (IC): 2 A;
BLW60C by NXP Semiconductors

BLW60C

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): 9 A; Transistor Application: AMPLIFIER;