NXP Semiconductors - BLV99/SL

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BLV99/SL by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BLV99/SL
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6 W; Maximum Collector Current (IC): .2 A; Package Shape: ROUND;
Datasheet BLV99/SL Datasheet
In Stock3,207
NAME DESCRIPTION
Minimum Power Gain (Gp): 8 dB
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Maximum Collector Current (IC): .2 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 25
No. of Terminals: 4
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 6 W
Maximum Collector-Emitter Voltage: 27 V
Terminal Position: RADIAL
Package Style (Meter): DISK BUTTON
JESD-30 Code: O-CRDB-F4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: FLAT
Additional Features: HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 200 Cel
Case Connection: EMITTER
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