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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | BSS52 |
| Description | NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): 1 A; Transistor Application: SWITCHING; |
| Datasheet | BSS52 Datasheet |
| In Stock | 102 |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 200 MHz |
| Package Body Material: | METAL |
| Maximum Collector Current (IC): | 1 A |
| Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| JEDEC-95 Code: | TO-39 |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 2000 |
| Minimum Operating Temperature: | -65 Cel |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 80 V |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W3 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum VCEsat: | 1.6 V |
| Maximum Power Dissipation Ambient: | 5 W |
