NXP Semiconductors - BUK100-50DL

BUK100-50DL by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK100-50DL
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 40 W; Terminal Form: THROUGH-HOLE; Package Shape: RECTANGULAR;
Datasheet BUK100-50DL Datasheet
In Stock141
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.5 A
Maximum Pulsed Drain Current (IDM): 54 A
Sub-Category: FET General Purpose Powers
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 40 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .125 ohm
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Drain Current (Abs) (ID): 13.5 A
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