NXP Semiconductors - BUK108-50GL/T3

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BUK108-50GL/T3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK108-50GL/T3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 13.5 A; No. of Elements: 1; Maximum Drain-Source On Resistance: .125 ohm;
Datasheet BUK108-50GL/T3 Datasheet
In Stock1,378
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 13.5 A
Maximum Pulsed Drain Current (IDM): 54 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 2
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .125 ohm
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