BUK446-800B by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BUK446-800B
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 800 V; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet	BUK446-800B Datasheet
In Stock	876

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	65 ns
Maximum Drain Current (ID):	1.7 A
Maximum Pulsed Drain Current (IDM):	6.8 A
Surface Mount:	NO
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	210 ns
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	30 W
Maximum Drain-Source On Resistance:	4 ohm
Maximum Feedback Capacitance (Crss):	50 pF
JEDEC-95 Code:	TO-220AB
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified

Pricing (USD)

Qty.	Unit Price	Ext. Price
876	-	-

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