NXP Semiconductors - BUK565-100A

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BUK565-100A by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK565-100A
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Qualification: Not Qualified; Maximum Feedback Capacitance (Crss): 150 pF;
Datasheet BUK565-100A Datasheet
In Stock197
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 125 ns
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 100 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 290 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .085 ohm
Avalanche Energy Rating (EAS): 140 mJ
Maximum Feedback Capacitance (Crss): 150 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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