NXP Semiconductors - BUK7109-75ATE/T3

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BUK7109-75ATE/T3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number BUK7109-75ATE/T3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 272 W; Maximum Drain Current (Abs) (ID): 120 A; Operating Mode: ENHANCEMENT MODE;
Datasheet BUK7109-75ATE/T3 Datasheet
In Stock4,688
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 272 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 120 A
Maximum Drain Current (Abs) (ID): 120 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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